Investigation of MOCVD growth of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-xAs/G aAs multilayer structures with high Al content

Gao Hongkai; Yun Feng; Zhang Jikang; Hou Xun; Gong Ping

doi:10.1016/0022-0248(91)90498-T

Investigation of MOCVD growth of Al_xGa_1-xAs/GaAs and Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/G aAs multilayer structures with high Al content

Gao Hongkai
, Yun Feng
, Zhang Jikang
, Hou Xun
, Gong Ping

CAS - Xi'an Institute of Optics and Precision Mechanics

Research output: Contribution to journal › Article › peer-review

Abstract

Mirror-like surfaces of Al_xGa_1-xAs/GaAs and Al_xGa_1-xAs/GaAs/Al_xGa_1-x As/GaAs multi-layer structures with high aluminium content (ifx = 0.83) grown on semi-insulating GaAs substrates were obtained in a self-made atmospheric pressure MOCVD system. The thickness of the layers varied from several nm to 10 μm. The aluminium content (x) of the Al_xGa_1-xAs layers could be controlled from 0 to 0.83. The high quality of the GaAs and Al_xGa_1-xAs epilayers has been assessed from double crystal X-ray rocking curve measurements. A minority-carrier diffusion length of 4.02 μm for a Zn-doped GaAs epilayer (N_a = 2×10¹⁹ cm^-3) was obtained. High purity GaAs with n_300K = 1.7×10¹⁵ cm^-3, μm_300K = 5900 cm²/V·s, n_77K = 1.4×10¹⁵ cm^{and μm_77K = 55500 cm²/V⋯s} has been obtained.

Original language	English
Pages (from-to)	428-433
Number of pages	6
Journal	Journal of Crystal Growth
Volume	107
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)90498-T
State	Published - 1 Jan 1991
Externally published	Yes

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@article{a21992c70200430d9e01c175b2457ccb,

title = "Investigation of MOCVD growth of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-xAs/G aAs multilayer structures with high Al content",

abstract = "Mirror-like surfaces of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-x As/GaAs multi-layer structures with high aluminium content (ifx = 0.83) grown on semi-insulating GaAs substrates were obtained in a self-made atmospheric pressure MOCVD system. The thickness of the layers varied from several nm to 10 μm. The aluminium content (x) of the AlxGa1-xAs layers could be controlled from 0 to 0.83. The high quality of the GaAs and AlxGa1-xAs epilayers has been assessed from double crystal X-ray rocking curve measurements. A minority-carrier diffusion length of 4.02 μm for a Zn-doped GaAs epilayer (Na = 2×1019 cm-3) was obtained. High purity GaAs with n300K = 1.7×1015 cm-3, μm300K = 5900 cm2/V·s, n77K = 1.4×1015 cmand μm77K = 55500 cm2/V⋯s has been obtained.",

author = "Gao Hongkai and Yun Feng and Zhang Jikang and Hou Xun and Gong Ping",

year = "1991",

month = jan,

day = "1",

doi = "10.1016/0022-0248(91)90498-T",

language = "英语",

volume = "107",

pages = "428--433",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Investigation of MOCVD growth of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-xAs/G aAs multilayer structures with high Al content

AU - Hongkai, Gao

AU - Feng, Yun

AU - Jikang, Zhang

AU - Xun, Hou

AU - Ping, Gong

PY - 1991/1/1

Y1 - 1991/1/1

N2 - Mirror-like surfaces of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-x As/GaAs multi-layer structures with high aluminium content (ifx = 0.83) grown on semi-insulating GaAs substrates were obtained in a self-made atmospheric pressure MOCVD system. The thickness of the layers varied from several nm to 10 μm. The aluminium content (x) of the AlxGa1-xAs layers could be controlled from 0 to 0.83. The high quality of the GaAs and AlxGa1-xAs epilayers has been assessed from double crystal X-ray rocking curve measurements. A minority-carrier diffusion length of 4.02 μm for a Zn-doped GaAs epilayer (Na = 2×1019 cm-3) was obtained. High purity GaAs with n300K = 1.7×1015 cm-3, μm300K = 5900 cm2/V·s, n77K = 1.4×1015 cmand μm77K = 55500 cm2/V⋯s has been obtained.

AB - Mirror-like surfaces of AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-x As/GaAs multi-layer structures with high aluminium content (ifx = 0.83) grown on semi-insulating GaAs substrates were obtained in a self-made atmospheric pressure MOCVD system. The thickness of the layers varied from several nm to 10 μm. The aluminium content (x) of the AlxGa1-xAs layers could be controlled from 0 to 0.83. The high quality of the GaAs and AlxGa1-xAs epilayers has been assessed from double crystal X-ray rocking curve measurements. A minority-carrier diffusion length of 4.02 μm for a Zn-doped GaAs epilayer (Na = 2×1019 cm-3) was obtained. High purity GaAs with n300K = 1.7×1015 cm-3, μm300K = 5900 cm2/V·s, n77K = 1.4×1015 cmand μm77K = 55500 cm2/V⋯s has been obtained.

UR - https://www.scopus.com/pages/publications/0025839428

U2 - 10.1016/0022-0248(91)90498-T

DO - 10.1016/0022-0248(91)90498-T

M3 - 文章

AN - SCOPUS:0025839428

SN - 0022-0248

VL - 107

SP - 428

EP - 433

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Investigation of MOCVD growth of Al_xGa_1-xAs/GaAs and Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/G aAs multilayer structures with high Al content

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