Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

Guangdong Zhou; Xiude Yang; Lihua Xiao; Bai Sun; Ankun Zhou

doi:10.1063/1.5089147

Investigation of a submerging redox behavior in Fe₂O₃ solid electrolyte for resistive switching memory

Guangdong Zhou
, Xiude Yang
, Lihua Xiao
, Bai Sun
, Ankun Zhou

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

A redox reaction submerged by a high current magnitude is impressively observed in a Fe₂O₃ solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe₂O₃ phase change process gives an insight into the evolution of memristors.

Original language	English
Article number	163506
Journal	Applied Physics Letters
Volume	114
Issue number	16
DOIs	https://doi.org/10.1063/1.5089147
State	Published - 22 Apr 2019
Externally published	Yes

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10.1063/1.5089147

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title = "Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory",

abstract = "A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors.",

author = "Guangdong Zhou and Xiude Yang and Lihua Xiao and Bai Sun and Ankun Zhou",

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AU - Zhou, Guangdong

AU - Yang, Xiude

AU - Xiao, Lihua

AU - Sun, Bai

AU - Zhou, Ankun

PY - 2019/4/22

Y1 - 2019/4/22

N2 - A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors.

AB - A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors.

UR - https://www.scopus.com/pages/publications/85064937746

U2 - 10.1063/1.5089147

DO - 10.1063/1.5089147

M3 - 文章

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SN - 0003-6951

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

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ER -

Investigation of a submerging redox behavior in Fe₂O₃ solid electrolyte for resistive switching memory

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