Investigation and Optimization of Pirani Vacuum Gauges with Monocrystal Silicon Heaters and Heat Sinks

Le Min Zhang; Bin Bin Jiao; Shi Chang Yun; Yan Mei Kong; Da Peng Chen

doi:10.1109/JMEMS.2017.2680738

Investigation and Optimization of Pirani Vacuum Gauges with Monocrystal Silicon Heaters and Heat Sinks

Le Min Zhang
, Bin Bin Jiao
, Shi Chang Yun
, Yan Mei Kong
, Da Peng Chen

CAS - Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This paper presents micro-Pirani vacuum gauges using low-resistivity monocrystal silicon for the heaters and the heat sinks. We designed a new Pirani gauge with an embedded Wheatstone bridge made by thick-silicon resistors that allows an improvement in resolution and sensitivity. With the optimized Wheatstone bridge structure, the temperature coefficient of the gauges pressure measure decreases from 2.5%/°C to 0.74%/°C, and the resolution was optimized from 0.071 to 0.008 Torr at 1 Torr. In addition, the gauges were packaged into non-hermetic cavities by wafer-level AlGe eutectic bonding to undergo the wafer-dicing process, with sensitivity improved from 1.65 to 17.1 V/Torr at 1 Torr.

Original language	English
Article number	7888492
Pages (from-to)	601-608
Number of pages	8
Journal	Journal of Microelectromechanical Systems
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/JMEMS.2017.2680738
State	Published - Jun 2017
Externally published	Yes

Keywords

Pirani gauge
Wheatstone bridge structure
post-complementary metal oxide semiconductor (CMOS) microelectromechanical systems (MEMs) process
thermal conductance
vacuum measurement
wafer-level package

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10.1109/JMEMS.2017.2680738

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title = "Investigation and Optimization of Pirani Vacuum Gauges with Monocrystal Silicon Heaters and Heat Sinks",

abstract = "This paper presents micro-Pirani vacuum gauges using low-resistivity monocrystal silicon for the heaters and the heat sinks. We designed a new Pirani gauge with an embedded Wheatstone bridge made by thick-silicon resistors that allows an improvement in resolution and sensitivity. With the optimized Wheatstone bridge structure, the temperature coefficient of the gauges pressure measure decreases from 2.5\%/°C to 0.74\%/°C, and the resolution was optimized from 0.071 to 0.008 Torr at 1 Torr. In addition, the gauges were packaged into non-hermetic cavities by wafer-level AlGe eutectic bonding to undergo the wafer-dicing process, with sensitivity improved from 1.65 to 17.1 V/Torr at 1 Torr.",

keywords = "Pirani gauge, Wheatstone bridge structure, post-complementary metal oxide semiconductor (CMOS) microelectromechanical systems (MEMs) process, thermal conductance, vacuum measurement, wafer-level package",

author = "Zhang, \{Le Min\} and Jiao, \{Bin Bin\} and Yun, \{Shi Chang\} and Kong, \{Yan Mei\} and Chen, \{Da Peng\}",

note = "Publisher Copyright: {\textcopyright} 1992-2012 IEEE.",

year = "2017",

month = jun,

doi = "10.1109/JMEMS.2017.2680738",

language = "英语",

volume = "26",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Investigation and Optimization of Pirani Vacuum Gauges with Monocrystal Silicon Heaters and Heat Sinks

AU - Zhang, Le Min

AU - Jiao, Bin Bin

AU - Yun, Shi Chang

AU - Kong, Yan Mei

AU - Chen, Da Peng

PY - 2017/6

Y1 - 2017/6

N2 - This paper presents micro-Pirani vacuum gauges using low-resistivity monocrystal silicon for the heaters and the heat sinks. We designed a new Pirani gauge with an embedded Wheatstone bridge made by thick-silicon resistors that allows an improvement in resolution and sensitivity. With the optimized Wheatstone bridge structure, the temperature coefficient of the gauges pressure measure decreases from 2.5%/°C to 0.74%/°C, and the resolution was optimized from 0.071 to 0.008 Torr at 1 Torr. In addition, the gauges were packaged into non-hermetic cavities by wafer-level AlGe eutectic bonding to undergo the wafer-dicing process, with sensitivity improved from 1.65 to 17.1 V/Torr at 1 Torr.

AB - This paper presents micro-Pirani vacuum gauges using low-resistivity monocrystal silicon for the heaters and the heat sinks. We designed a new Pirani gauge with an embedded Wheatstone bridge made by thick-silicon resistors that allows an improvement in resolution and sensitivity. With the optimized Wheatstone bridge structure, the temperature coefficient of the gauges pressure measure decreases from 2.5%/°C to 0.74%/°C, and the resolution was optimized from 0.071 to 0.008 Torr at 1 Torr. In addition, the gauges were packaged into non-hermetic cavities by wafer-level AlGe eutectic bonding to undergo the wafer-dicing process, with sensitivity improved from 1.65 to 17.1 V/Torr at 1 Torr.

KW - Pirani gauge

KW - Wheatstone bridge structure

KW - post-complementary metal oxide semiconductor (CMOS) microelectromechanical systems (MEMs) process

KW - thermal conductance

KW - vacuum measurement

KW - wafer-level package

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U2 - 10.1109/JMEMS.2017.2680738

DO - 10.1109/JMEMS.2017.2680738

M3 - 文章

AN - SCOPUS:85017172121

SN - 1057-7157

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JO - Journal of Microelectromechanical Systems

JF - Journal of Microelectromechanical Systems

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M1 - 7888492

ER -

Investigation and Optimization of Pirani Vacuum Gauges with Monocrystal Silicon Heaters and Heat Sinks

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Keywords

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