Interfaces Reduce Dislocation Loop Formation in Irradiated Nanolayered Zr-2.5Nb

Interface engineering is a useful method to reduce the accumulation of irradiation defects in metals. Here, we study the effect of interface on the formation of dislocation loops in helium and krypton ions irradiated nanolayered Zr-2.5Nb. Nanolaminated α/β-Zr duplex-phase structures remain stable after irradiation at 400 °C up to 20 dpa. Dislocation denuded zones with width of 30 to 40 nm are formed at interfaces. The number density and size of both a-loops and c-loops are smaller in nanolayered sample because of interface accelerating point defects recombination. These observations indicate that α/β-Zr interfaces effectively reduce dislocation loops formation.