Interface thermal transport of graphene-based intralayer heterostructures

We have studied the effects of atomic mass (AM) and interatomic potential (IP) on the interface thermal transport of graphene-based intralayer heterostructures, composed of graphene (Gr) and graphene-like materials (Gx). We find that the phonon mismatch between Gx and Gr, induced by the variations of both AM and IP, leads to an obvious thermal resistance in such a hybrid heterostructure model device, following some scaling laws. Compared with that of graphene, the Kapitza resistance (R) of the hybrid heterostructure increases linearly (in power law) with the decrease (increase) of AM in Gx, whereas its variation with IP presents a contrary behavior. On the other hand, the effective interface thermal resistivity (r) increases parabolically (exponentially) with decreasing (increasing) AM and IP in Gx. We also find that the thermal rectification ratio can be effectively manipulated by the variation of AM and IP. Finally, we illustrate that the obtained scaling laws can be used to estimate r in real heterostructures. This study is expected to provide an efficient way to evaluate the interface effect on thermal transport, which have potential applications in design of high-performance heterostructure-based nanodevices.