Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates

Ying Ding; Jianghua Chen; Junming He; Ming Liu; Chunrui Ma; Chonglin Chen

doi:10.1016/j.jcrysgro.2013.08.003

Interface structures and strain relaxation mechanisms of ferroelectric BaTiO₃/SrTiO₃ multilayers on (001) MgO substrates

Ying Ding
, Jianghua Chen
, Junming He
, Ming Liu
, Chunrui Ma
, Chonglin Chen

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Interface structures and strain relaxation mechanisms of ferroelectric BaTiO₃/SrTiO₃ multilayers on (001) MgO substrates were systematically studied by electron microscopy. The multilayers are formed in bi-layered structures with different growth morphologies. (i) The lower layer with single crystallinity is an epitaxial layer on the MgO substrate. Defects such as misfit dislocations, anti-phase boundaries, and stacking faults reveal in this layer, acting as a strain relaxation mechanism and (ii) the upper layer is the rest of the multilayer, exhibiting a highly textured columnar structure with small angle boundaries. The columnar grains are formed by local epitaxial growth within individual grains. The strain-relaxation mechanisms are established to understand the growth dynamics of the multilayers.

Original language	English
Pages (from-to)	19-24
Number of pages	6
Journal	Journal of Crystal Growth
Volume	383
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.08.003
State	Published - 2013
Externally published	Yes

Keywords

A1. Characterization
A1. Defects
A1. Growth models
A3. Pulsed laser deposition
B1. Perovskites
B2. Ferroelectric materials

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10.1016/j.jcrysgro.2013.08.003

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title = "Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates",

abstract = "Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates were systematically studied by electron microscopy. The multilayers are formed in bi-layered structures with different growth morphologies. (i) The lower layer with single crystallinity is an epitaxial layer on the MgO substrate. Defects such as misfit dislocations, anti-phase boundaries, and stacking faults reveal in this layer, acting as a strain relaxation mechanism and (ii) the upper layer is the rest of the multilayer, exhibiting a highly textured columnar structure with small angle boundaries. The columnar grains are formed by local epitaxial growth within individual grains. The strain-relaxation mechanisms are established to understand the growth dynamics of the multilayers.",

keywords = "A1. Characterization, A1. Defects, A1. Growth models, A3. Pulsed laser deposition, B1. Perovskites, B2. Ferroelectric materials",

author = "Ying Ding and Jianghua Chen and Junming He and Ming Liu and Chunrui Ma and Chonglin Chen",

year = "2013",

doi = "10.1016/j.jcrysgro.2013.08.003",

language = "英语",

volume = "383",

pages = "19--24",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates

AU - Ding, Ying

AU - Chen, Jianghua

AU - He, Junming

AU - Liu, Ming

AU - Ma, Chunrui

AU - Chen, Chonglin

PY - 2013

Y1 - 2013

N2 - Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates were systematically studied by electron microscopy. The multilayers are formed in bi-layered structures with different growth morphologies. (i) The lower layer with single crystallinity is an epitaxial layer on the MgO substrate. Defects such as misfit dislocations, anti-phase boundaries, and stacking faults reveal in this layer, acting as a strain relaxation mechanism and (ii) the upper layer is the rest of the multilayer, exhibiting a highly textured columnar structure with small angle boundaries. The columnar grains are formed by local epitaxial growth within individual grains. The strain-relaxation mechanisms are established to understand the growth dynamics of the multilayers.

AB - Interface structures and strain relaxation mechanisms of ferroelectric BaTiO3/SrTiO3 multilayers on (001) MgO substrates were systematically studied by electron microscopy. The multilayers are formed in bi-layered structures with different growth morphologies. (i) The lower layer with single crystallinity is an epitaxial layer on the MgO substrate. Defects such as misfit dislocations, anti-phase boundaries, and stacking faults reveal in this layer, acting as a strain relaxation mechanism and (ii) the upper layer is the rest of the multilayer, exhibiting a highly textured columnar structure with small angle boundaries. The columnar grains are formed by local epitaxial growth within individual grains. The strain-relaxation mechanisms are established to understand the growth dynamics of the multilayers.

KW - A1. Characterization

KW - A1. Defects

KW - A1. Growth models

KW - A3. Pulsed laser deposition

KW - B1. Perovskites

KW - B2. Ferroelectric materials

UR - https://www.scopus.com/pages/publications/84883898456

U2 - 10.1016/j.jcrysgro.2013.08.003

DO - 10.1016/j.jcrysgro.2013.08.003

M3 - 文章

AN - SCOPUS:84883898456

SN - 0022-0248

VL - 383

SP - 19

EP - 24

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Interface structures and strain relaxation mechanisms of ferroelectric BaTiO₃/SrTiO₃ multilayers on (001) MgO substrates

Abstract

Keywords

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