Interface structure of Ag (111)/SnO2 (200) composite material studied by density functional theory

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Abstract

Electric contact material of Ag/SnO2 was successfully synthesized by in situ process method. The interface structure was characterized by high-resolution transmission electron microscopy (HTEM) and simulated at atomic scale on computer. The mean-square displacements of atoms near the interface were calculated, and the results showed that near the interface both Ag side and SnO2 were mismatched and this effect decays rapidly far from the interface. By inspecting the calculated density of states (DOS), we found that the electric-conductivity of this composite material was decreased because of the localized 4d and 2p electrons of Ag and O near the Fermi surface, respectively. Electron density changed acutely across the interface, so that there was no extra compound precipitated. A micro-electric field also formed in the whole material due to the interface structure, and this may affect the electron conduction and the related electric-conductivity of the composite. It is found that the interface cohesive energy of Ag (111)/SnO2 (200) was -3.50 J/m2, which is higher than the experimental results.

Original languageEnglish
Pages (from-to)1258-1263
Number of pages6
JournalScience in China, Series E: Technological Sciences
Volume52
Issue number5
DOIs
StatePublished - May 2009

Keywords

  • Ab initio
  • Electric contact material
  • Electron structure
  • Interface energy
  • Reactive synthesis
  • Structure relaxation

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