Interface engineered ferroelectric BaTiO 3//SrTiO 3 Heterostructures with Anomalous Clamped Polarization on Si (100)

Ming Liu; Greg Collins; Emmaul Silva; Chunrui Ma; Jian Liu; Chonglin Chen; Jie He; Jiechao Jiang; Efstathios I. Meletis; Shengwei Qu; Qingyu Zhang; Amma Bhalla

doi:10.1080/10584587.2011.616420

Interface engineered ferroelectric BaTiO ₃//SrTiO ₃ Heterostructures with Anomalous Clamped Polarization on Si (100)

Ming Liu
, Greg Collins
, Emmaul Silva
, Chunrui Ma
, Jian Liu
, Chonglin Chen
, Jie He
, Jiechao Jiang
, Efstathios I. Meletis
, Shengwei Qu
, Qingyu Zhang
, Amma Bhalla

University of Texas at San Antonio
Dalian University of Technology
University of Texas at Arlington

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Ferroelectric BaTiO ₃//SrTiO ₃ multilayered thin films were successfully grown on Si (100) substrates. Microstructure investigations reveal that the films have clear multilayered interface structures. A new piezoelectric phenomenon was discovered in which the clamped polarization domains can be adjusted by the periodicity of the layers. Such periodicity control can be used as a new device concept for designing and fabricating novel nanomechanical devices.

Original language	English
Pages (from-to)	89-94
Number of pages	6
Journal	Integrated Ferroelectrics
Volume	131
Issue number	1
DOIs	https://doi.org/10.1080/10584587.2011.616420
State	Published - 1 Jan 2011
Externally published	Yes

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title = "Interface engineered ferroelectric BaTiO 3//SrTiO 3 Heterostructures with Anomalous Clamped Polarization on Si (100)",

abstract = "Ferroelectric BaTiO 3//SrTiO 3 multilayered thin films were successfully grown on Si (100) substrates. Microstructure investigations reveal that the films have clear multilayered interface structures. A new piezoelectric phenomenon was discovered in which the clamped polarization domains can be adjusted by the periodicity of the layers. Such periodicity control can be used as a new device concept for designing and fabricating novel nanomechanical devices.",

author = "Ming Liu and Greg Collins and Emmaul Silva and Chunrui Ma and Jian Liu and Chonglin Chen and Jie He and Jiechao Jiang and Meletis, \{Efstathios I.\} and Shengwei Qu and Qingyu Zhang and Amma Bhalla",

year = "2011",

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doi = "10.1080/10584587.2011.616420",

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T1 - Interface engineered ferroelectric BaTiO 3//SrTiO 3 Heterostructures with Anomalous Clamped Polarization on Si (100)

AU - Liu, Ming

AU - Collins, Greg

AU - Silva, Emmaul

AU - Ma, Chunrui

AU - Liu, Jian

AU - Chen, Chonglin

AU - He, Jie

AU - Jiang, Jiechao

AU - Meletis, Efstathios I.

AU - Qu, Shengwei

AU - Zhang, Qingyu

AU - Bhalla, Amma

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Ferroelectric BaTiO 3//SrTiO 3 multilayered thin films were successfully grown on Si (100) substrates. Microstructure investigations reveal that the films have clear multilayered interface structures. A new piezoelectric phenomenon was discovered in which the clamped polarization domains can be adjusted by the periodicity of the layers. Such periodicity control can be used as a new device concept for designing and fabricating novel nanomechanical devices.

AB - Ferroelectric BaTiO 3//SrTiO 3 multilayered thin films were successfully grown on Si (100) substrates. Microstructure investigations reveal that the films have clear multilayered interface structures. A new piezoelectric phenomenon was discovered in which the clamped polarization domains can be adjusted by the periodicity of the layers. Such periodicity control can be used as a new device concept for designing and fabricating novel nanomechanical devices.

UR - https://www.scopus.com/pages/publications/84863172699

U2 - 10.1080/10584587.2011.616420

DO - 10.1080/10584587.2011.616420

M3 - 文章

AN - SCOPUS:84863172699

SN - 1058-4587

VL - 131

SP - 89

EP - 94

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Interface engineered ferroelectric BaTiO ₃//SrTiO ₃ Heterostructures with Anomalous Clamped Polarization on Si (100)

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