Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation

Sourav Roy; Qiang Wang; Yunkun Wang; Yijun Zhang; Shijie Zhai; Wei Ren; Zuo Guang Ye; Gang Niu

doi:10.1109/ICICDT.2019.8790856

Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation

Sourav Roy
, Qiang Wang
, Yunkun Wang
, Yijun Zhang
, Shijie Zhai
, Wei Ren
, Zuo Guang Ye
, Gang Niu

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al³⁺ doping and post deposition annealing helps the device to better show synaptic characteristics.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790856
State	Published - Jun 2019
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

HfO
RRAM
doping
interface
synaptic simulation

Access to Document

10.1109/ICICDT.2019.8790856

Cite this

Roy, S., Wang, Q., Wang, Y., Zhang, Y., Zhai, S., Ren, W., Ye, Z. G., & Niu, G. (2019). Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790856 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790856

Roy, Sourav ; Wang, Qiang ; Wang, Yunkun et al. / Interface and Doping Engineering of HfO Based Multi-Level RRAM : Towards Synaptic Simulation for Neuromorphic Computation. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

@inproceedings{942981990d5144f28835f0f0e08da2c5,

title = "Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation",

abstract = "An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al3+ doping and post deposition annealing helps the device to better show synaptic characteristics.",

keywords = "HfO, RRAM, doping, interface, synaptic simulation",

author = "Sourav Roy and Qiang Wang and Yunkun Wang and Yijun Zhang and Shijie Zhai and Wei Ren and Ye, \{Zuo Guang\} and Gang Niu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790856",

language = "英语",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Roy, S, Wang, Q, Wang, Y, Zhang, Y, Zhai, S, Ren, W , Ye, ZG & Niu, G 2019, Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790856, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790856

Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation. / Roy, Sourav; Wang, Qiang; Wang, Yunkun et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790856 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Interface and Doping Engineering of HfO Based Multi-Level RRAM

T2 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019

AU - Roy, Sourav

AU - Wang, Qiang

AU - Wang, Yunkun

AU - Zhang, Yijun

AU - Zhai, Shijie

AU - Ren, Wei

AU - Ye, Zuo Guang

AU - Niu, Gang

PY - 2019/6

Y1 - 2019/6

N2 - An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al3+ doping and post deposition annealing helps the device to better show synaptic characteristics.

AB - An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al3+ doping and post deposition annealing helps the device to better show synaptic characteristics.

KW - HfO

KW - RRAM

KW - doping

KW - interface

KW - synaptic simulation

UR - https://www.scopus.com/pages/publications/85071480665

U2 - 10.1109/ICICDT.2019.8790856

DO - 10.1109/ICICDT.2019.8790856

M3 - 会议稿件

AN - SCOPUS:85071480665

T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 17 June 2019 through 19 June 2019

ER -

Roy S, Wang Q, Wang Y, Zhang Y, Zhai S, Ren W et al. Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790856. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790856

Interface and Doping Engineering of HfO Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation

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