Influence of ZrO ₂ addition on the microstructure and discharge properties of Mg-Zr-O protective layers in alternating current plasma display panels

Mg-Zr-O protective layers for alternating current plasma display panels were deposited by e -beam evaporation. The effect of the Zr O2 addition on both the discharge properties [firing voltage Vf, minimum sustaining voltage Vs, and memory coefficient (MC)] and the microstructure of deposited Mg-Zr-O films were investigated. The results show that the film microstructure changes and the electron emission enhancement due to the Zr O2 addition are the main reasons for the improvements of the discharge properties of Mg-Zr-O films. A small amount of Zr solution in MgO under its solid solubility can effectively increase the outer-shell valence electron emission yield so as to decrease Vf and Vs compared with using a pure MgO protective layer. The Zr O2 (MgO+Zr O2) ratio has a great effect on the film surface conditions. Proper surface morphologies make a good contribution to obtain large MC in accordance with lower firing voltage.