Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi                         1.5                         Zn                         1.0                         Nb                         1.5                         O                         7                          thin films prepared by pulsed laser deposition

Xiaohua Zhang; Wei Ren; Peng Shi; Aifeng Tian; Hong Xin; Xiaofeng Chen; Xiaoqing Wu; Xi Yao

doi:10.1016/j.apsusc.2010.04.056

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition

Xiaohua Zhang
, Wei Ren
, Peng Shi
, Aifeng Tian
, Hong Xin
, Xiaofeng Chen
, Xiaoqing Wu
, Xi Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO ₂ /Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi ₂ O ₃ , BiNbO ₄ and Bi ₅ Nb ₃ O ₁₅ can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10 ^-4 at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.

Original language	English
Pages (from-to)	6607-6611
Number of pages	5
Journal	Applied Surface Science
Volume	256
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2010.04.056
State	Published - 1 Sep 2010

Keywords

Dielectric tunability
Pulsed laser deposition
Thin films

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10.1016/j.apsusc.2010.04.056

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Zhang, X., Ren, W., Shi, P., Tian, A., Xin, H., Chen, X., Wu, X., & Yao, X. (2010). Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition Applied Surface Science, 256(22), 6607-6611. https://doi.org/10.1016/j.apsusc.2010.04.056

Zhang, Xiaohua ; Ren, Wei ; Shi, Peng et al. / Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition In: Applied Surface Science. 2010 ; Vol. 256, No. 22. pp. 6607-6611.

@article{714bd82e794f4bf2b082c46d86cdb0f3,

title = " Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 thin films prepared by pulsed laser deposition ",

abstract = " The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO 2 /Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi 2 O 3 , BiNbO 4 and Bi 5 Nb 3 O 15 can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 {\texttimes} 10 -4 at 10 kHz, respectively. The tunability is 10\% at a dc bias field of 0.9 MV/cm.",

keywords = "Dielectric tunability, Pulsed laser deposition, Thin films",

author = "Xiaohua Zhang and Wei Ren and Peng Shi and Aifeng Tian and Hong Xin and Xiaofeng Chen and Xiaoqing Wu and Xi Yao",

year = "2010",

month = sep,

day = "1",

doi = "10.1016/j.apsusc.2010.04.056",

language = "英语",

volume = "256",

pages = "6607--6611",

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publisher = "Elsevier B.V.",

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Zhang, X, Ren, W , Shi, P, Tian, A, Xin, H, Chen, X, Wu, X & Yao, X 2010, ' Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition ', Applied Surface Science, vol. 256, no. 22, pp. 6607-6611. https://doi.org/10.1016/j.apsusc.2010.04.056

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition . / Zhang, Xiaohua; Ren, Wei ; Shi, Peng et al.
In: Applied Surface Science, Vol. 256, No. 22, 01.09.2010, p. 6607-6611.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 thin films prepared by pulsed laser deposition

AU - Zhang, Xiaohua

AU - Ren, Wei

AU - Shi, Peng

AU - Tian, Aifeng

AU - Xin, Hong

AU - Chen, Xiaofeng

AU - Wu, Xiaoqing

AU - Yao, Xi

PY - 2010/9/1

Y1 - 2010/9/1

N2 - The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO 2 /Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi 2 O 3 , BiNbO 4 and Bi 5 Nb 3 O 15 can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10 -4 at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.

AB - The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO 2 /Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi 2 O 3 , BiNbO 4 and Bi 5 Nb 3 O 15 can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10 -4 at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.

KW - Dielectric tunability

KW - Pulsed laser deposition

KW - Thin films

UR - https://www.scopus.com/pages/publications/77955665035

U2 - 10.1016/j.apsusc.2010.04.056

DO - 10.1016/j.apsusc.2010.04.056

M3 - 文章

AN - SCOPUS:77955665035

SN - 0169-4332

VL - 256

SP - 6607

EP - 6611

JO - Applied Surface Science

JF - Applied Surface Science

IS - 22

ER -

Zhang X, Ren W , Shi P, Tian A, Xin H, Chen X et al. Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition Applied Surface Science. 2010 Sep 1;256(22):6607-6611. doi: 10.1016/j.apsusc.2010.04.056

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi _1.5 Zn _1.0 Nb _1.5 O ₇ thin films prepared by pulsed laser deposition

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