Influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 thin films

Takeshi Kobayashi; Yasuhiro Suzuki; Natsumi Makimoto; Hiroshi Funakubo; Ryutaro Maeda

doi:10.1063/1.4901912

Influence of pulse poling on the piezoelectric property of Pb(Zr_0.52,Ti_0.48)O₃ thin films

Takeshi Kobayashi
, Yasuhiro Suzuki
, Natsumi Makimoto
, Hiroshi Funakubo
, Ryutaro Maeda

National Institute of Advanced Industrial Science and Technology
Institute of Science Tokyo

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr_0.52,Ti_0.48)O₃ (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d₃₁, under small signal actuation at 1-3 V_pp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d₃₁| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.

Original language	English
Article number	117116
Journal	AIP Advances
Volume	4
Issue number	11
DOIs	https://doi.org/10.1063/1.4901912
State	Published - 1 Nov 2014
Externally published	Yes

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title = "Influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 thin films",

abstract = "We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d31, under small signal actuation at 1-3 Vpp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d31| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.",

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T1 - Influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 thin films

AU - Kobayashi, Takeshi

AU - Suzuki, Yasuhiro

AU - Makimoto, Natsumi

AU - Funakubo, Hiroshi

AU - Maeda, Ryutaro

PY - 2014/11/1

Y1 - 2014/11/1

N2 - We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d31, under small signal actuation at 1-3 Vpp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d31| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.

AB - We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d31, under small signal actuation at 1-3 Vpp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d31| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.

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U2 - 10.1063/1.4901912

DO - 10.1063/1.4901912

M3 - 文章

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JF - AIP Advances

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ER -

Influence of pulse poling on the piezoelectric property of Pb(Zr_0.52,Ti_0.48)O₃ thin films

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