Influence of Mn doping on domain wall motion in Pb(Zr_0.52Ti _0.48)O₃ films

Mn-doped PbZr_0.52Ti_0.48O₃ (PZT) films were utilized to study the effect of acceptor dopant concentration on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films between ∼0.5-2 μm in thickness doped with 1-2mol.% Mn, the low field relative permittivity remained between 900 and 1000. With increasing Mn concentration, a threshold field developed in the ac field dependence of the relative permittivity. Furthermore, both the reversible and irreversible Rayleigh constants decreased. These observations are consistent with the possibility that Mn′_Ti - V_Ö (or Mn″_Ti - V _Ö ) defect dipoles act as strong pinning centers.