TY - JOUR
T1 - Influence of field plate terminal on the electric field distribution and breakdown characteristics of diamond SBD
AU - Wang, Jin Jun
AU - Wang, Xiao Liang
AU - Zhang, Jing Wen
AU - Wang, Xia
N1 - Publisher Copyright:
© 2016, Science Press. All right reserved.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Numerical simulation model of field plate termination diamond Schottky barrier diode(SBD) was established in this paper, the influence of the field plate length L, insulating layer thickness TOX, substrate doping concentration NB, and the structure shape of the field plate on the electric field distribution inside the device and the influence of breakdown voltage of diamond SBD were numerical simulated by Silvaco device simulation tools ATLAS. The results of numerical simulation were analyzed and explained physically. The breakdown voltage increases with the increasing length of the field plate within the range of 0.0 to 0.2 μm when TOX=0.4 μm and NB=1015 cm-3, and decreases when L>0.2 μm. The breakdown voltage increases with the increasing of insulating layer thickness TOX within the range of 0.1 to 0.4 μm when L=0.2 μm and NB=1015 cm-3, and decreases when TOX>0.4 μm. The breakdown voltage of the device reaches its maximum 1 873 kV when L=0.2 μm, TOX=0.4 μm, and NB=1015 cm-3. The steps field plate can effectively improve the breakdown voltage of the device, compared with the ordinary field plate structure.
AB - Numerical simulation model of field plate termination diamond Schottky barrier diode(SBD) was established in this paper, the influence of the field plate length L, insulating layer thickness TOX, substrate doping concentration NB, and the structure shape of the field plate on the electric field distribution inside the device and the influence of breakdown voltage of diamond SBD were numerical simulated by Silvaco device simulation tools ATLAS. The results of numerical simulation were analyzed and explained physically. The breakdown voltage increases with the increasing length of the field plate within the range of 0.0 to 0.2 μm when TOX=0.4 μm and NB=1015 cm-3, and decreases when L>0.2 μm. The breakdown voltage increases with the increasing of insulating layer thickness TOX within the range of 0.1 to 0.4 μm when L=0.2 μm and NB=1015 cm-3, and decreases when TOX>0.4 μm. The breakdown voltage of the device reaches its maximum 1 873 kV when L=0.2 μm, TOX=0.4 μm, and NB=1015 cm-3. The steps field plate can effectively improve the breakdown voltage of the device, compared with the ordinary field plate structure.
KW - Breakdown voltage
KW - Diamond Schottky barrier diode
KW - Electric field distribution
KW - Field plate termination
UR - https://www.scopus.com/pages/publications/84968583543
U2 - 10.3788/fgxb20163704.0432
DO - 10.3788/fgxb20163704.0432
M3 - 文章
AN - SCOPUS:84968583543
SN - 1000-7032
VL - 37
SP - 432
EP - 438
JO - Faguang Xuebao/Chinese Journal of Luminescence
JF - Faguang Xuebao/Chinese Journal of Luminescence
IS - 4
ER -