Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

Qifeng Hou; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Cuibai Yang; Haibo Yin; Qingwen Deng; Jinmin Li; Zhanguo Wang; Xun Hou

doi:10.1063/1.3562008

Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

Qifeng Hou
, Xiaoliang Wang
, Hongling Xiao
, Cuimei Wang
, Cuibai Yang
, Haibo Yin
, Qingwen Deng
, Jinmin Li
, Zhanguo Wang
, Xun Hou

CAS - Institute of Semiconductors
ISCAS

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The influence of electric field on persistent photoconductivity in unintentionally doped n -GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity.

Original language	English
Article number	102104
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3562008
State	Published - 7 Mar 2011
Externally published	Yes

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10.1063/1.3562008

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title = "Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN",

abstract = "The influence of electric field on persistent photoconductivity in unintentionally doped n -GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity.",

author = "Qifeng Hou and Xiaoliang Wang and Hongling Xiao and Cuimei Wang and Cuibai Yang and Haibo Yin and Qingwen Deng and Jinmin Li and Zhanguo Wang and Xun Hou",

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doi = "10.1063/1.3562008",

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T1 - Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

AU - Hou, Qifeng

AU - Wang, Xiaoliang

AU - Xiao, Hongling

AU - Wang, Cuimei

AU - Yang, Cuibai

AU - Yin, Haibo

AU - Deng, Qingwen

AU - Li, Jinmin

AU - Wang, Zhanguo

AU - Hou, Xun

PY - 2011/3/7

Y1 - 2011/3/7

N2 - The influence of electric field on persistent photoconductivity in unintentionally doped n -GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity.

AB - The influence of electric field on persistent photoconductivity in unintentionally doped n -GaN is investigated. It was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. After a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. It is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the Coulomb-repulsive characteristic of defects related to persistent photoconductivity.

UR - https://www.scopus.com/pages/publications/79952690510

U2 - 10.1063/1.3562008

DO - 10.1063/1.3562008

M3 - 文章

AN - SCOPUS:79952690510

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102104

ER -

Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

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