Influence of DC degradation on the dielectric response of CaCu3Ti4O12 Ceramics

Xuetong Zhao; Ruijin Liao; Junyan Zhang; Feipeng Wang; Jianying Li

doi:10.1109/ICPADM.2015.7295228

Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics

Xuetong Zhao
, Ruijin Liao
, Junyan Zhang
, Feipeng Wang
, Jianying Li

School of Electrical Engineering

Chongqing University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, CaCu₃Ti₄O₁₂ ceramics were synthesized to investigate the influence of dc degradation on the dielectric response. Two dielectric relaxation processes related to grain and domain boundaries appearing at low temperature were fitted according to Debye theory. It was found that the dc conductance loss at low frequency was greatly increased after dc degradation. The relaxation behaviors of grain and grain boundaries were characterized in impedance plots. The results showed that the values of grain boundaries resistance were greatly decreased from 1.7 megohm to 15 megohm at 433 K with the dc degradation. And the corresponding activation energy of grain boundaries was decreased from 1.25 eV to 0.73 eV, while the activation energy of grain keep nearly a constant at about 0.11 eV. The results of current density-breakdown field (J-E) behavior revealed that the breakdown field and nonlinear coefficient of CaCu₃Ti₄O₁₂ ceramics were both dropped after the dc gradation processes. The barrier height were also decreased from 0.57 eV to 0.31 eV. Therefore, it was proposed that the relaxation processes of grain boundaries may be mainly related with electrical properties of CaCu₃Ti₄O₁₂ ceramics and influenced by the dc degradation.

Original language	English
Title of host publication	ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	140-143
Number of pages	4
ISBN (Electronic)	9781479989034
DOIs	https://doi.org/10.1109/ICPADM.2015.7295228
State	Published - 8 Oct 2015
Event	11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015 - Sydney, Australia Duration: 19 Jul 2015 → 22 Jul 2015

Publication series

Name	Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
Volume	2015-October

Conference

Conference	11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015
Country/Territory	Australia
City	Sydney
Period	19/07/15 → 22/07/15

Keywords

CaCuTiO
Debye theory
grain boundaries
relaxation loss

Access to Document

10.1109/ICPADM.2015.7295228

Cite this

Zhao, X., Liao, R., Zhang, J., Wang, F., & Li, J. (2015). Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics. In ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials (pp. 140-143). Article 7295228 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICPADM.2015.7295228

Zhao, Xuetong ; Liao, Ruijin ; Zhang, Junyan et al. / Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics. ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 140-143 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials).

@inproceedings{f0baf3efaccd43938c053635f2c23a48,

title = "Influence of DC degradation on the dielectric response of CaCu3Ti4O12 Ceramics",

abstract = "In this work, CaCu3Ti4O12 ceramics were synthesized to investigate the influence of dc degradation on the dielectric response. Two dielectric relaxation processes related to grain and domain boundaries appearing at low temperature were fitted according to Debye theory. It was found that the dc conductance loss at low frequency was greatly increased after dc degradation. The relaxation behaviors of grain and grain boundaries were characterized in impedance plots. The results showed that the values of grain boundaries resistance were greatly decreased from 1.7 megohm to 15 megohm at 433 K with the dc degradation. And the corresponding activation energy of grain boundaries was decreased from 1.25 eV to 0.73 eV, while the activation energy of grain keep nearly a constant at about 0.11 eV. The results of current density-breakdown field (J-E) behavior revealed that the breakdown field and nonlinear coefficient of CaCu3Ti4O12 ceramics were both dropped after the dc gradation processes. The barrier height were also decreased from 0.57 eV to 0.31 eV. Therefore, it was proposed that the relaxation processes of grain boundaries may be mainly related with electrical properties of CaCu3Ti4O12 ceramics and influenced by the dc degradation.",

keywords = "CaCuTiO, Debye theory, grain boundaries, relaxation loss",

author = "Xuetong Zhao and Ruijin Liao and Junyan Zhang and Feipeng Wang and Jianying Li",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015 ; Conference date: 19-07-2015 Through 22-07-2015",

year = "2015",

month = oct,

day = "8",

doi = "10.1109/ICPADM.2015.7295228",

language = "英语",

series = "Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "140--143",

booktitle = "ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials",

}

Zhao, X, Liao, R, Zhang, J, Wang, F & Li, J 2015, Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics. in ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials., 7295228, Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials, vol. 2015-October, Institute of Electrical and Electronics Engineers Inc., pp. 140-143, 11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015, Sydney, Australia, 19/07/15. https://doi.org/10.1109/ICPADM.2015.7295228

Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics. / Zhao, Xuetong; Liao, Ruijin; Zhang, Junyan et al.
ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc., 2015. p. 140-143 7295228 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials; Vol. 2015-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of DC degradation on the dielectric response of CaCu3Ti4O12 Ceramics

AU - Zhao, Xuetong

AU - Liao, Ruijin

AU - Zhang, Junyan

AU - Wang, Feipeng

AU - Li, Jianying

PY - 2015/10/8

Y1 - 2015/10/8

N2 - In this work, CaCu3Ti4O12 ceramics were synthesized to investigate the influence of dc degradation on the dielectric response. Two dielectric relaxation processes related to grain and domain boundaries appearing at low temperature were fitted according to Debye theory. It was found that the dc conductance loss at low frequency was greatly increased after dc degradation. The relaxation behaviors of grain and grain boundaries were characterized in impedance plots. The results showed that the values of grain boundaries resistance were greatly decreased from 1.7 megohm to 15 megohm at 433 K with the dc degradation. And the corresponding activation energy of grain boundaries was decreased from 1.25 eV to 0.73 eV, while the activation energy of grain keep nearly a constant at about 0.11 eV. The results of current density-breakdown field (J-E) behavior revealed that the breakdown field and nonlinear coefficient of CaCu3Ti4O12 ceramics were both dropped after the dc gradation processes. The barrier height were also decreased from 0.57 eV to 0.31 eV. Therefore, it was proposed that the relaxation processes of grain boundaries may be mainly related with electrical properties of CaCu3Ti4O12 ceramics and influenced by the dc degradation.

AB - In this work, CaCu3Ti4O12 ceramics were synthesized to investigate the influence of dc degradation on the dielectric response. Two dielectric relaxation processes related to grain and domain boundaries appearing at low temperature were fitted according to Debye theory. It was found that the dc conductance loss at low frequency was greatly increased after dc degradation. The relaxation behaviors of grain and grain boundaries were characterized in impedance plots. The results showed that the values of grain boundaries resistance were greatly decreased from 1.7 megohm to 15 megohm at 433 K with the dc degradation. And the corresponding activation energy of grain boundaries was decreased from 1.25 eV to 0.73 eV, while the activation energy of grain keep nearly a constant at about 0.11 eV. The results of current density-breakdown field (J-E) behavior revealed that the breakdown field and nonlinear coefficient of CaCu3Ti4O12 ceramics were both dropped after the dc gradation processes. The barrier height were also decreased from 0.57 eV to 0.31 eV. Therefore, it was proposed that the relaxation processes of grain boundaries may be mainly related with electrical properties of CaCu3Ti4O12 ceramics and influenced by the dc degradation.

KW - CaCuTiO

KW - Debye theory

KW - grain boundaries

KW - relaxation loss

UR - https://www.scopus.com/pages/publications/84962566003

U2 - 10.1109/ICPADM.2015.7295228

DO - 10.1109/ICPADM.2015.7295228

M3 - 会议稿件

AN - SCOPUS:84962566003

T3 - Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials

SP - 140

EP - 143

BT - ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2015

Y2 - 19 July 2015 through 22 July 2015

ER -

Zhao X, Liao R, Zhang J, Wang F, Li J. Influence of DC degradation on the dielectric response of CaCu₃Ti₄O₁₂ Ceramics. In ICPADM 2015 - 2015 IEEE 11th International Conference on the Properties and Applications of Dielectric Materials. Institute of Electrical and Electronics Engineers Inc. 2015. p. 140-143. 7295228. (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials). doi: 10.1109/ICPADM.2015.7295228