In-depth mechanism analysis for negative differential resistance coupled resistance switching behavior in multiple factors regulated MoO_x/MoO_y-stacked memristor

It is well known that memristors have low-power parallel brain-like computing capabilities and fast data/information/image processing efficiency. It will have application prospects if devices with multiple physical characteristics can be developed, especially playing an important role in the next generation of artificial intelligence (AI). In this work, a double-layer stacked memristor with the structure of Ag/MoO_x/MoO_y/fluorine doped tin oxide (FTO) was synthesized by magnetron sputtering (MS). The memristor presents the evolution of resistance switching (RS) behavior and negative differential resistance (NDR) coupled RS (NRS) behavior by adjusting the operating voltage. It was also observed that RS behavior of the memristor was obviously enhanced with the increase of oxygen content, and even the Ag/MoO_x/MoO_y/FTO device still exhibit excellent RS behavior at high temperature. More importantly, the temperature coefficient of the Ag/MoO_x/MoO_y/FTO device in low resistance state (LRS) was calculated to demonstrate that the formation and fracture of Ag conductive filaments (CFs) have an important impact on the RS behavior of memristor. Therefore, this work not only provides theoretical proof for a deeper understanding of the physical mechanism of RS behavior, but also it expands the path for developing high-capacity memristor with high temperature resistance and multi-level storage.