TY - GEN
T1 - Improvement of stresses in multilayer structures with SiO2/Pt/Pb(Zr,Ti)O3/Pt thin-film stacks for micro-scanner actuators
AU - Zhang, L.
AU - Maeda, R.
AU - Wang, Z. J.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - Stresses in MEMS multilayer structures with SiO2/Pt/Pb(Zr,Ti)O3/Pt thin-film stacks on Si substrates for micro-scanner actuators were investigated by measuring radius of wafer curvature for each film. The stresses in each film after the last coating were in tension except the Pt top electrode. The Pt bottom electrode shows an especially large tensile stress of approximately 1.3 GPa. The beam-scanners were then fabricated to,investigate the curving state of multilayer structure released from Si substrate. The curving states of beams are related to not only the stresses in each film but also the balance of flexural rigidity of each film. A beam without any curvature was obtained successfully by changing the thickness of each film. A large optical scanning angle of 40-degree was obtained at the first resonance frequency of 2.78 kHz for the fabricated straight beam-scanner.
AB - Stresses in MEMS multilayer structures with SiO2/Pt/Pb(Zr,Ti)O3/Pt thin-film stacks on Si substrates for micro-scanner actuators were investigated by measuring radius of wafer curvature for each film. The stresses in each film after the last coating were in tension except the Pt top electrode. The Pt bottom electrode shows an especially large tensile stress of approximately 1.3 GPa. The beam-scanners were then fabricated to,investigate the curving state of multilayer structure released from Si substrate. The curving states of beams are related to not only the stresses in each film but also the balance of flexural rigidity of each film. A beam without any curvature was obtained successfully by changing the thickness of each film. A large optical scanning angle of 40-degree was obtained at the first resonance frequency of 2.78 kHz for the fabricated straight beam-scanner.
UR - https://www.scopus.com/pages/publications/84963751533
U2 - 10.1109/OMEMS.2002.1031484
DO - 10.1109/OMEMS.2002.1031484
M3 - 会议稿件
AN - SCOPUS:84963751533
T3 - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
SP - 143
EP - 144
BT - 2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002
Y2 - 20 August 2002 through 23 August 2002
ER -