@inproceedings{4a54bd88a7414107af75b49fafe1c3f8,
title = "Improvement of oxidation resistance of SiC/C (graphite) composites by silicon infiltration in surface",
abstract = "SiC/C (graphite) composite ceramics with 20vol\% flake graphite were fabricated by Plasma Activated Sintering (PAS) firstly; the composites treated by silicon infiltration in surface were oxidized from 800°C to 1500°C. Effect of silicon infiltration on the oxidation resistance of SiC/C (graphite) composites was characterized by TG/DTA, SEM and XRD. The results show that the graphite in surface of composites reacted with silicon to form a dense SiC film about 30μm-in-thickness. The oxidation resistance temperature was increased from 600°C to 1300°C. Below 1300°C, the surface of composites by silicon filtration was oxidized to form a dense continuous oxide film to hider the oxidation of graphite in matrix. At 1500°C, the surface oxide film was heavy damaged, and many micropores were produced; inner graphite was oxidized above 1300°C again.",
keywords = "Antioxidation, Graphite, SiC, Silicon infiltration",
author = "Hongwei Li and Qin Zhang and Zhihao Jin and Jiping Wang and Haiyun Jin",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.658.384",
language = "英语",
isbn = "0878492445",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "384--387",
booktitle = "Eco-Materials Processing and Design XI, ISEPD-11",
}