Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer

Shumiao Zhang; Juan Wang; Qi Li; Guoqing Shao; Genqiang Chen; Shi He; Ruozheng Wang; Wei Wang; Renan Bu; Feng Wen; Hong Xing Wang

doi:10.1109/TED.2022.3209165

Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer

Shumiao Zhang
, Juan Wang
, Qi Li
, Guoqing Shao
, Genqiang Chen
, Shi He
, Ruozheng Wang
, Wei Wang
, Renan Bu
, Feng Wen
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal-insulator-semiconductor Schottky barrier diode (MIS-SBD). The current-voltage and current-voltage-temperature characteristics in the range from 25 °C to 150 °C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal-semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.

Original language	English
Pages (from-to)	6260-6264
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	11
DOIs	https://doi.org/10.1109/TED.2022.3209165
State	Published - 1 Nov 2022

Keywords

Interface states
Schottky barrier diode (SBD)
Schottky barrier height (SBH)
SnOinterface layer

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10.1109/TED.2022.3209165

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@article{9c26df48bd8a46e099f83348aefa9038,

title = "Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer",

abstract = "A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal-insulator-semiconductor Schottky barrier diode (MIS-SBD). The current-voltage and current-voltage-temperature characteristics in the range from 25 °C to 150 °C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal-semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.",

keywords = "Interface states, Schottky barrier diode (SBD), Schottky barrier height (SBH), SnOinterface layer",

author = "Shumiao Zhang and Juan Wang and Qi Li and Guoqing Shao and Genqiang Chen and Shi He and Ruozheng Wang and Wei Wang and Renan Bu and Feng Wen and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = nov,

day = "1",

doi = "10.1109/TED.2022.3209165",

language = "英语",

volume = "69",

pages = "6260--6264",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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TY - JOUR

T1 - Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer

AU - Zhang, Shumiao

AU - Wang, Juan

AU - Li, Qi

AU - Shao, Guoqing

AU - Chen, Genqiang

AU - He, Shi

AU - Wang, Ruozheng

AU - Wang, Wei

AU - Bu, Renan

AU - Wen, Feng

AU - Wang, Hong Xing

PY - 2022/11/1

Y1 - 2022/11/1

N2 - A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal-insulator-semiconductor Schottky barrier diode (MIS-SBD). The current-voltage and current-voltage-temperature characteristics in the range from 25 °C to 150 °C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal-semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.

AB - A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal-insulator-semiconductor Schottky barrier diode (MIS-SBD). The current-voltage and current-voltage-temperature characteristics in the range from 25 °C to 150 °C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal-semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.

KW - Interface states

KW - Schottky barrier diode (SBD)

KW - Schottky barrier height (SBH)

KW - SnOinterface layer

UR - https://www.scopus.com/pages/publications/85139860223

U2 - 10.1109/TED.2022.3209165

DO - 10.1109/TED.2022.3209165

M3 - 文章

AN - SCOPUS:85139860223

SN - 0018-9383

VL - 69

SP - 6260

EP - 6264

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer

Abstract

Keywords

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