Impedance spectroscopic characterization of sol-gel prepared SrTiO 3 thin films on silicon

H. Y. Guo; Z. G. Ye

doi:10.1080/00150190590966379

Impedance spectroscopic characterization of sol-gel prepared SrTiO ₃ thin films on silicon

H. Y. Guo
, Z. G. Ye

Simon Fraser University

Research output: Contribution to journal › Article › peer-review

Abstract

SrTiO₃ thin films have been prepared on Si substrate using a sol-gel method. Impedance spectroscopy has been performed to characterize the Au/SrTiO₃/Si/Ag structure under a constant bias voltage (accumulation state). The contributions, from the SrTiO₃ grains and the grain boundaries and the interface, to the dielectric properties of the metalinsulator-semiconductor (MIS) structure have been separated out and discussed.

Original language	English
Pages (from-to)	193-199
Number of pages	7
Journal	Ferroelectrics
Volume	318
DOIs	https://doi.org/10.1080/00150190590966379
State	Published - 2005
Externally published	Yes

Keywords

Interface
MIS
Thin film

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10.1080/00150190590966379

Cite this

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title = "Impedance spectroscopic characterization of sol-gel prepared SrTiO 3 thin films on silicon",

abstract = "SrTiO3 thin films have been prepared on Si substrate using a sol-gel method. Impedance spectroscopy has been performed to characterize the Au/SrTiO3/Si/Ag structure under a constant bias voltage (accumulation state). The contributions, from the SrTiO3 grains and the grain boundaries and the interface, to the dielectric properties of the metalinsulator-semiconductor (MIS) structure have been separated out and discussed.",

keywords = "Interface, MIS, Thin film",

author = "Guo, \{H. Y.\} and Ye, \{Z. G.\}",

year = "2005",

doi = "10.1080/00150190590966379",

language = "英语",

volume = "318",

pages = "193--199",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

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AU - Guo, H. Y.

AU - Ye, Z. G.

PY - 2005

Y1 - 2005

N2 - SrTiO3 thin films have been prepared on Si substrate using a sol-gel method. Impedance spectroscopy has been performed to characterize the Au/SrTiO3/Si/Ag structure under a constant bias voltage (accumulation state). The contributions, from the SrTiO3 grains and the grain boundaries and the interface, to the dielectric properties of the metalinsulator-semiconductor (MIS) structure have been separated out and discussed.

AB - SrTiO3 thin films have been prepared on Si substrate using a sol-gel method. Impedance spectroscopy has been performed to characterize the Au/SrTiO3/Si/Ag structure under a constant bias voltage (accumulation state). The contributions, from the SrTiO3 grains and the grain boundaries and the interface, to the dielectric properties of the metalinsulator-semiconductor (MIS) structure have been separated out and discussed.

KW - Interface

KW - MIS

KW - Thin film

UR - https://www.scopus.com/pages/publications/33751281492

U2 - 10.1080/00150190590966379

DO - 10.1080/00150190590966379

M3 - 文章

AN - SCOPUS:33751281492

SN - 0015-0193

VL - 318

SP - 193

EP - 199

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Impedance spectroscopic characterization of sol-gel prepared SrTiO ₃ thin films on silicon

Abstract

Keywords

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