Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition

Weixia Liu; Leiwen Gao; Kewei Xu; Fei Ma

doi:10.1116/1.4985053

Impact of ultrathin Al₂O₃ interlayers on resistive switching in TiO_x thin films deposited by atomic layer deposition

Weixia Liu
, Leiwen Gao
, Kewei Xu
, Fei Ma

School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

TiO_x and TiO_x/Al₂O₃/TiO_x sandwiched thin films were fabricated by using atomic layer deposition at 250 °C. As compared to single-layered TiO_x, TiO_x/Al₂O₃/TiO_x sandwiched thin films exhibit stable resistive switching with a substantially improved OFF/ON ratio and elongated endurance. Essentially, the embedded ultrathin Al₂O₃ interlayer will suppress the crystallization of amorphous TiO_x and thus reduce the channels for current leakage. As a result, the resistive switching properties are substantially enhanced. The TiO_x/Al₂O₃/TiO_x sandwiched thin films with the Al₂O₃ thickness of more than 2 nm show stable unipolar resistive switching, and the rupture and reformation of conductive filaments mainly occur at the top interface between Al₂O₃ and TiO_x layers. A physical model is proposed to understand the resistive switching behaviors.

Original language	English
Article number	041001
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	35
Issue number	4
DOIs	https://doi.org/10.1116/1.4985053
State	Published - 1 Jul 2017

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title = "Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition",

abstract = "TiOx and TiOx/Al2O3/TiOx sandwiched thin films were fabricated by using atomic layer deposition at 250 °C. As compared to single-layered TiOx, TiOx/Al2O3/TiOx sandwiched thin films exhibit stable resistive switching with a substantially improved OFF/ON ratio and elongated endurance. Essentially, the embedded ultrathin Al2O3 interlayer will suppress the crystallization of amorphous TiOx and thus reduce the channels for current leakage. As a result, the resistive switching properties are substantially enhanced. The TiOx/Al2O3/TiOx sandwiched thin films with the Al2O3 thickness of more than 2 nm show stable unipolar resistive switching, and the rupture and reformation of conductive filaments mainly occur at the top interface between Al2O3 and TiOx layers. A physical model is proposed to understand the resistive switching behaviors.",

author = "Weixia Liu and Leiwen Gao and Kewei Xu and Fei Ma",

note = "Publisher Copyright: {\textcopyright} 2017 American Vacuum Society.",

year = "2017",

month = jul,

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doi = "10.1116/1.4985053",

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volume = "35",

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TY - JOUR

T1 - Impact of ultrathin Al2O3 interlayers on resistive switching in TiOx thin films deposited by atomic layer deposition

AU - Liu, Weixia

AU - Gao, Leiwen

AU - Xu, Kewei

AU - Ma, Fei

PY - 2017/7/1

Y1 - 2017/7/1

N2 - TiOx and TiOx/Al2O3/TiOx sandwiched thin films were fabricated by using atomic layer deposition at 250 °C. As compared to single-layered TiOx, TiOx/Al2O3/TiOx sandwiched thin films exhibit stable resistive switching with a substantially improved OFF/ON ratio and elongated endurance. Essentially, the embedded ultrathin Al2O3 interlayer will suppress the crystallization of amorphous TiOx and thus reduce the channels for current leakage. As a result, the resistive switching properties are substantially enhanced. The TiOx/Al2O3/TiOx sandwiched thin films with the Al2O3 thickness of more than 2 nm show stable unipolar resistive switching, and the rupture and reformation of conductive filaments mainly occur at the top interface between Al2O3 and TiOx layers. A physical model is proposed to understand the resistive switching behaviors.

AB - TiOx and TiOx/Al2O3/TiOx sandwiched thin films were fabricated by using atomic layer deposition at 250 °C. As compared to single-layered TiOx, TiOx/Al2O3/TiOx sandwiched thin films exhibit stable resistive switching with a substantially improved OFF/ON ratio and elongated endurance. Essentially, the embedded ultrathin Al2O3 interlayer will suppress the crystallization of amorphous TiOx and thus reduce the channels for current leakage. As a result, the resistive switching properties are substantially enhanced. The TiOx/Al2O3/TiOx sandwiched thin films with the Al2O3 thickness of more than 2 nm show stable unipolar resistive switching, and the rupture and reformation of conductive filaments mainly occur at the top interface between Al2O3 and TiOx layers. A physical model is proposed to understand the resistive switching behaviors.

UR - https://www.scopus.com/pages/publications/85020733587

U2 - 10.1116/1.4985053

DO - 10.1116/1.4985053

M3 - 文章

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SN - 2166-2746

VL - 35

JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 4

M1 - 041001

ER -

Impact of ultrathin Al₂O₃ interlayers on resistive switching in TiO_x thin films deposited by atomic layer deposition

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