@inproceedings{c30f28127b574e0a83c74d37ffdbe4a7,
title = "Impact of RTN and Variability on RRAM-Based Neural Network",
abstract = "Resistive switching memory devices can be categorized into filamentary RRAM or non-filamentary RRAM depending on the switching mechanisms. Both types of RRAM devices have been studied as novel synaptic devices in hardware neural networks. In this work, we analyze the amplitude of Random Telegraph Noise (RTN) and program-induced variabilities in both TaOx/Ta2Os filamentary and TiO2/a-Si (a-VMCO) non-filamentary RRAM devices and evaluate their impact on the pattern recognition accuracy of neural networks. It is revealed that the non-filamentary RRAM has a tighter RTN amplitude distribution than its filamentary counterpart, and also has much lower programed-induced variability, which lead to much smaller impact on the recognition accuracy, making it a promising candidate in synaptic application.",
author = "P. Freitas and Z. Chai and W. Zhang and Zhang, \{J. F.\} and J. Marsland",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",
year = "2020",
month = nov,
day = "3",
doi = "10.1109/ICSICT49897.2020.9278290",
language = "英语",
series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",
booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
}