TY - GEN
T1 - Impact of line edge roughness and linewidth roughness on critical dimension variation
AU - Zhao, Fengxia
AU - Zhang, Linna
AU - Wang, Qinghai
AU - Jiang, Zhuangde
PY - 2012
Y1 - 2012
N2 - To investigate the line edge roughness (LER) and linewidth roughness (LWR) impact on critical dimension (CD) variation for gates, three characterization models of LER/LWR are present, the LER/LWR line edges with the self-affine behavior are simulated, and the relationship between the CD variation and the parameters of LER/LWR are found out. The results show that without any other sources of variation, LER/LWR can cause gate line-width variation, and its effect on the CD variation is of first-order.
AB - To investigate the line edge roughness (LER) and linewidth roughness (LWR) impact on critical dimension (CD) variation for gates, three characterization models of LER/LWR are present, the LER/LWR line edges with the self-affine behavior are simulated, and the relationship between the CD variation and the parameters of LER/LWR are found out. The results show that without any other sources of variation, LER/LWR can cause gate line-width variation, and its effect on the CD variation is of first-order.
KW - critical dimension variation
KW - line edge roughness (LER)
KW - linewidth roughness (LWR)
KW - simulation
UR - https://www.scopus.com/pages/publications/84867040994
U2 - 10.1109/CSAE.2012.6272996
DO - 10.1109/CSAE.2012.6272996
M3 - 会议稿件
AN - SCOPUS:84867040994
SN - 9781467300865
T3 - CSAE 2012 - Proceedings, 2012 IEEE International Conference on Computer Science and Automation Engineering
SP - 475
EP - 479
BT - CSAE 2012 - Proceedings, 2012 IEEE International Conference on Computer Science and Automation Engineering
T2 - 2012 IEEE International Conference on Computer Science and Automation Engineering, CSAE 2012
Y2 - 25 May 2012 through 27 May 2012
ER -