Hydrogenation Induced Carrier Mobility Polarity Reversal in Monolayer AlN

Two-dimensional (2D) materials promote the development of nanoelectronic devices, which requires candidate systems with both a high carrier mobility and a moderate electronic bandgap. We present a first principles calculation of the intrinsic carrier mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H₂) monolayer AlN. Numerical results reveal that 1L-AlN shows a hole-dominated ultra-large carrier mobility (up to 5277 cm² V⁻¹ s⁻¹). Upon full hydrogenation (1L-AlN-H₂), the polarity of carrier mobility is reversed from hole dominated to electron dominated. This tunable polarity of intrinsic carrier mobility indicates monolayer AlN as a promising candidate for future nanoelectronics.