Highly sensitive X-ray detector based on a β-Ga₂O₃:Fe single crystal

β-Ga2O3 semiconductor crystal is of wide band gap and high radiation resistance, which shows great potential for applications such as medical imaging, radiation detections, and nuclear physical experiments. However, developing β-Ga2O3-based X-ray radiation detectors with high sensitivity, fast response speed, and excellent stability remains a challenge. Here we demonstrate a high-performance X-ray detector based on a Fe doped β-Ga2O3 (β-Ga2O3:Fe) crystal grown by the float-zone growth method, which consists of two vertical Ti/Au electrodes and a β-Ga2O3:Fe crystal with high resistivity. The resistivity of the β-Ga2O3:Fe crystal exceeds 1012 Ω cm owed to the compensation of the Fe ions and the free electrons. The detector shows short response time (0.2 s), high sensitivity (75.3 μC Gyair-1 cm-2), and high signal-to-noise ratio (100), indicating great potential for X-ray radiation detection.