Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

L. Dong; Y. D. Chen; G. S. Zhu; H. R. Xu; J. J. Song; X. Y. Zhang; Y. Y. Zhao; D. L. Yan; Y. L; A. B. Yu

doi:10.1016/j.matlet.2019.126735

Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

L. Dong
, Y. D. Chen
, G. S. Zhu
, H. R. Xu
, J. J. Song
, X. Y. Zhang
, Y. Y. Zhao
, D. L. Yan
, Y. L
, A. B. Yu

School of Energy and Power Engineering

Guilin University of Electronic Technology
Xihua University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10⁻⁴ Ωcm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.

Original language	English
Article number	126735
Journal	Materials Letters
Volume	260
DOIs	https://doi.org/10.1016/j.matlet.2019.126735
State	Published - 1 Feb 2020

Keywords

(4 0 0) preferential orientation
IR reflectivity
Photoelectric properties
Sputtering
Thin films

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10.1016/j.matlet.2019.126735

Cite this

@article{48062c650e1e4cb2a93d15cd76bcfe13,

title = "Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity",

abstract = "ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10−4 Ωcm, high visible light transmittance of 88.34\% and a high IR reflectivity of 88.37\%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.",

keywords = "(4 0 0) preferential orientation, IR reflectivity, Photoelectric properties, Sputtering, Thin films",

author = "L. Dong and Chen, \{Y. D.\} and Zhu, \{G. S.\} and Xu, \{H. R.\} and Song, \{J. J.\} and Zhang, \{X. Y.\} and Zhao, \{Y. Y.\} and Yan, \{D. L.\} and Y. L and Yu, \{A. B.\}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = feb,

day = "1",

doi = "10.1016/j.matlet.2019.126735",

language = "英语",

volume = "260",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

AU - Dong, L.

AU - Chen, Y. D.

AU - Zhu, G. S.

AU - Xu, H. R.

AU - Song, J. J.

AU - Zhang, X. Y.

AU - Zhao, Y. Y.

AU - Yan, D. L.

AU - L, Y.

AU - Yu, A. B.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10−4 Ωcm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.

AB - ITO (Indium Tin Oxide) thin film with a sandwich structure that comprises two layers of oxygen-poor layer and an oxygen-rich layer was deposited on glass substrates by DC sputtering using a ceramic target. The effect of structure on the photoelectric properties of the ITO thin film was investigated. The results indicated that the as-prepared ITO film with sandwich structure showed high (4 0 0) preferred orientation. Simultaneously, the ITO thin film with sandwich structure exhibited excellent optoelectronic properties, which has a low resistivity of 1.384 × 10−4 Ωcm, high visible light transmittance of 88.34% and a high IR reflectivity of 88.37%. Excellent optoelectronic properties can meet the infrared stealth requirements for aircraft windows.

KW - (4 0 0) preferential orientation

KW - IR reflectivity

KW - Photoelectric properties

KW - Sputtering

KW - Thin films

UR - https://www.scopus.com/pages/publications/85075416333

U2 - 10.1016/j.matlet.2019.126735

DO - 10.1016/j.matlet.2019.126735

M3 - 文章

AN - SCOPUS:85075416333

SN - 0167-577X

VL - 260

JO - Materials Letters

JF - Materials Letters

M1 - 126735

ER -

Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

Abstract

Keywords

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Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity

Abstract

Keywords

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Cite this

Highly (4 0 0) preferential ITO thin film prepared by DC sputtering with excellent conductivity and infrared reflectivity