High-voltage AlGaN/GaN-based lateral Schottky barrier diodes

He Kang; Quan Wang; Hong Ling Xiao; Cui Mei Wang; Li Juan Jiang; Chun Feng; Hong Chen; Hai Bo Yin; Xiao Liang Wang; Zhan Guo Wang; Xun Hou

doi:10.1088/0256-307X/31/6/068502

High-voltage AlGaN/GaN-based lateral Schottky barrier diodes

He Kang
, Quan Wang
, Hong Ling Xiao
, Cui Mei Wang
, Li Juan Jiang
, Chun Feng
, Hong Chen
, Hai Bo Yin
, Xiao Liang Wang
, Zhan Guo Wang
, Xun Hou

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V²BR/RON,sp value of 194 MW.cm^-2.

Original language	English
Article number	068502
Journal	Chinese Physics Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/31/6/068502
State	Published - Jun 2014
Externally published	Yes

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10.1088/0256-307X/31/6/068502

Cite this

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title = "High-voltage AlGaN/GaN-based lateral Schottky barrier diodes",

abstract = "Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm-2.",

author = "He Kang and Quan Wang and Xiao, \{Hong Ling\} and Wang, \{Cui Mei\} and Jiang, \{Li Juan\} and Chun Feng and Hong Chen and Yin, \{Hai Bo\} and Wang, \{Xiao Liang\} and Wang, \{Zhan Guo\} and Xun Hou",

year = "2014",

month = jun,

doi = "10.1088/0256-307X/31/6/068502",

language = "英语",

volume = "31",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - High-voltage AlGaN/GaN-based lateral Schottky barrier diodes

AU - Kang, He

AU - Wang, Quan

AU - Xiao, Hong Ling

AU - Wang, Cui Mei

AU - Jiang, Li Juan

AU - Feng, Chun

AU - Chen, Hong

AU - Yin, Hai Bo

AU - Wang, Xiao Liang

AU - Wang, Zhan Guo

AU - Hou, Xun

PY - 2014/6

Y1 - 2014/6

N2 - Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm-2.

AB - Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm-2.

UR - https://www.scopus.com/pages/publications/84901992334

U2 - 10.1088/0256-307X/31/6/068502

DO - 10.1088/0256-307X/31/6/068502

M3 - 文章

AN - SCOPUS:84901992334

SN - 0256-307X

VL - 31

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

M1 - 068502

ER -

High-voltage AlGaN/GaN-based lateral Schottky barrier diodes

Abstract

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