High-temperature piezoresistive pressure sensitive silicon chip and electrostatic bonding process

The flat-membrane silicon on insulator (SOI) high-temperature piezoresistive pressure sensitive silicon chip has been developed using MEMS (micro electro-mechanical system) technology. It was packaged on the borosilicate glass ring by electrostatic bonding process, thus the inverted-cup elastic-sensitive unit was produced. The influence of the alignment error between the silicon chip and glass ring on the nonlinearity of the pressure sensitive silicon chip was analyzed. The experiments were performed to verify the effect of the electrostatic bonding process on the temperature properties of the pressure sensitive silicon chip, and obtained the characteristics of the fabricated high-temperature pressure sensor. According to the theoretical and experimental results, the alignment error has a great impact on the nonlinearity of the silicon chip, while the electrostatic bonding process has less effect on the zero drifts and thermal zero drifts of the silicon chip. The fabricated high-temperature pressure sensor has fine performances to meet the requirements of engineering applications.