TY - GEN
T1 - High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs
AU - Gu, Zhaoyuan
AU - Yang, Mingchao
AU - Yang, Yi
AU - Liu, Weihua
AU - Han, Chuanyu
AU - Geng, Li
AU - Hao, Yue
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - SiC-based devices have good high-temperature operating characteristics and are suitable for operating in extreme environments. For 4H-SiC JBS-integrated MOSFETs, analysis of electrical performance at high temperatures, especially above 450K, is very necessary and urgent. In this work, three 1.2 kV junction barrier Schottky diode (JBS) integrated MOSFETs (JBSFETs) were fabricated with different junction lengths. The static and dynamic performances are evaluated and analyzed over a temperature range of 300 K - 575 K. At room temperature, a longer Schottky junction length of JBSFETs will result in larger leakage current and a smaller reverse conduction voltage drop. Over the temperature range of 450K to 575K, the reverse conduction voltage drop of the three devices tends to be stable with the increase in temperature, in contrast, the reverse recovery charge increases rapidly with the increase in temperature. This means that the PIN body diodes of the JBSFETs are more likely to conduct over this temperature range. Our measurements and analysis show important guidance for the design and applications of SiC power devices, especially at high temperatures.
AB - SiC-based devices have good high-temperature operating characteristics and are suitable for operating in extreme environments. For 4H-SiC JBS-integrated MOSFETs, analysis of electrical performance at high temperatures, especially above 450K, is very necessary and urgent. In this work, three 1.2 kV junction barrier Schottky diode (JBS) integrated MOSFETs (JBSFETs) were fabricated with different junction lengths. The static and dynamic performances are evaluated and analyzed over a temperature range of 300 K - 575 K. At room temperature, a longer Schottky junction length of JBSFETs will result in larger leakage current and a smaller reverse conduction voltage drop. Over the temperature range of 450K to 575K, the reverse conduction voltage drop of the three devices tends to be stable with the increase in temperature, in contrast, the reverse recovery charge increases rapidly with the increase in temperature. This means that the PIN body diodes of the JBSFETs are more likely to conduct over this temperature range. Our measurements and analysis show important guidance for the design and applications of SiC power devices, especially at high temperatures.
KW - JBS-integrated MOSFET
KW - high-temperature
KW - reverse recovery characteristics
KW - third quadrant characteristics
UR - https://www.scopus.com/pages/publications/85173604270
U2 - 10.1109/ICIEA58696.2023.10241572
DO - 10.1109/ICIEA58696.2023.10241572
M3 - 会议稿件
AN - SCOPUS:85173604270
T3 - Proceedings of the 18th IEEE Conference on Industrial Electronics and Applications, ICIEA 2023
SP - 1145
EP - 1150
BT - Proceedings of the 18th IEEE Conference on Industrial Electronics and Applications, ICIEA 2023
A2 - Cai, Wenjian
A2 - Yang, Guilin
A2 - Qiu, Jun
A2 - Gao, Tingting
A2 - Jiang, Lijun
A2 - Zheng, Tianjiang
A2 - Wang, Xinli
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th IEEE Conference on Industrial Electronics and Applications, ICIEA 2023
Y2 - 18 August 2023 through 22 August 2023
ER -