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High pressure sintering behavior of polycrystalline diamond with tungsten

  • Yanfei Wang
  • , Kaixue Wang
  • , Ning Tan
  • , Chengliang Liu
  • , Yu Li
  • , Zili Kou
  • Sichuan University

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Polycrystalline diamond was investigated under high pressure and high temperature of 5.0 GPa and 1100- 1500 °C in the presence of tungsten. In situ resistance measurements indicated that reactions between diamond and tungsten happened at about 960 °C. Phase analysis demonstrated that WC increased and meta-stability of W2C decreased clearly at the higher temperature. It is clear from the characterization of the sintered body that the electrical resistance decreased and the density of specimens increased as the sintering temperature rose. The specimen sintered at 1500 °C has a homogeneous microstructure and good conductivity.

Original languageEnglish
Pages (from-to)419-427
Number of pages9
JournalHigh Pressure Research
Volume31
Issue number3
DOIs
StatePublished - Sep 2011
Externally publishedYes

Keywords

  • Electrical resistance
  • High pressure and high temperature
  • Polycrystalline diamond
  • Sintering
  • Tungsten

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