Abstract
High powers can be produced within narrow spectral widths by stabilizing diode lasers with external volume holographic gratings, but this typically introduces additional optical losses. We compared the influence of diode laser design on stabilization performance by comparing devices with super large optical waveguides (4.8 $\mu{\rm m}$) and narrow vertical far fields with reference designs with thinner waveguides (1.6 $\mu{\rm m}$). We found that the use of diode lasers with super large optical waveguides substantially improves the stabilization performance, with lower losses and wider operation ranges sustained even in the presence of significant $({}{\rm 1}~\mu{\rm m})$ bar smile.
| Original language | English |
|---|---|
| Article number | 6151028 |
| Pages (from-to) | 703-705 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 24 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2012 |
| Externally published | Yes |
Keywords
- Broad area
- external stabilization
- high power
- narrow far field
- semiconductor laser
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