High performance GaN-based monolithic bidirectional switch using diode bridges

Haiyong Wang; Wei Mao; Cui Yang; Shenglei Zhao; Ming Du; Xiaofei Wang; Xuefeng Zheng; Chong Wang; Chunfu Zhang; Jincheng Zhang; Yue Hao

doi:10.35848/1882-0786/ac1b3f

High performance GaN-based monolithic bidirectional switch using diode bridges

Haiyong Wang
, Wei Mao
, Cui Yang
, Shenglei Zhao
, Ming Du
, Xiaofei Wang
, Xuefeng Zheng
, Chong Wang
, Chunfu Zhang
, Jincheng Zhang
, Yue Hao

Faculty of Electronic and Information Engineering

Xidian University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of ∼1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.

Original language	English
Article number	096502
Journal	Applied Physics Express
Volume	14
Issue number	9
DOIs	https://doi.org/10.35848/1882-0786/ac1b3f
State	Published - Sep 2021

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@article{c2bc0d87dcf0433aa76beaf590d9a115,

title = "High performance GaN-based monolithic bidirectional switch using diode bridges",

abstract = "A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of ∼1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.",

author = "Haiyong Wang and Wei Mao and Cui Yang and Shenglei Zhao and Ming Du and Xiaofei Wang and Xuefeng Zheng and Chong Wang and Chunfu Zhang and Jincheng Zhang and Yue Hao",

note = "Publisher Copyright: {\textcopyright} 2021 The Japan Society of Applied Physics.",

year = "2021",

month = sep,

doi = "10.35848/1882-0786/ac1b3f",

language = "英语",

volume = "14",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "9",

}

TY - JOUR

T1 - High performance GaN-based monolithic bidirectional switch using diode bridges

AU - Wang, Haiyong

AU - Mao, Wei

AU - Yang, Cui

AU - Zhao, Shenglei

AU - Du, Ming

AU - Wang, Xiaofei

AU - Zheng, Xuefeng

AU - Wang, Chong

AU - Zhang, Chunfu

AU - Zhang, Jincheng

AU - Hao, Yue

PY - 2021/9

Y1 - 2021/9

N2 - A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of ∼1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.

AB - A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The bidirectional switch features four recessed anode Schottky barrier diodes embedded in a p-GaN HEMT, which effectively reduces the on-state voltage and minimizes the parasitic elements. The proposed device exhibits a high threshold voltage of 1.84 V, a low on-state voltage of 1.13 V, and a high forward and reverse off-state breakdown voltages of ∼1100 V. In addition, the function of the bidirectional switch as an AC power chopper is successfully verified.

UR - https://www.scopus.com/pages/publications/85114051410

U2 - 10.35848/1882-0786/ac1b3f

DO - 10.35848/1882-0786/ac1b3f

M3 - 文章

AN - SCOPUS:85114051410

SN - 1882-0778

VL - 14

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

M1 - 096502

ER -

High performance GaN-based monolithic bidirectional switch using diode bridges

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