High-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode

Runlong Gao; Linyue Liu; Yang Li; Lvkang Shen; Pengying Wan; Xiao Ouyang; Haozhe Zhang; Jinlu Ruan; Leidang Zhou; Liang Chen; Xianpeng Zhang; Jinliang Liu; Hui Li; Ming Liu; Xiaoping Ouyang

doi:10.1016/j.enconman.2021.115090

High-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode

Runlong Gao
, Linyue Liu
, Yang Li
, Lvkang Shen
, Pengying Wan
, Xiao Ouyang
, Haozhe Zhang
, Jinlu Ruan
, Leidang Zhou
, Liang Chen
, Xianpeng Zhang
, Jinliang Liu
, Hui Li
, Ming Liu
, Xiaoping Ouyang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Alpha-voltaic cells have great potential in military, biomedical, and infrastructure applications due to their characteristics of long operating life, small volume, and superior adaptability. However, improvements in power conversion efficiency (PCE), and the balance between power density and stability have been a challenge owing to the ‘poor-matching’ between energy conversion transducers and alpha-emitting isotope sources, as well as the radiation damage to semiconductor devices. In this study, we report the electrical properties of a high-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode energy conversion transducer (active area of 1 cm²) that has been experimentally validated by a He ions electrostatic accelerator. Remarkably, the alpha-voltaic cell displayed an excellent PCE of 0.88%, exhibiting a nearly 7-fold enhancement compared to alpha-voltaic cells of previous studies, with a strikingly high open-circuit voltage of 1.99 V, a short-circuit current of 13.64 nA/cm², and a maximum output power density of 16.78 nW/cm².

Original language	English
Article number	115090
Journal	Energy Conversion and Management
Volume	252
DOIs	https://doi.org/10.1016/j.enconman.2021.115090
State	Published - 15 Jan 2022

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

4H-SiC PIN junction diode
Alpha-voltaic cell
High power conversion efficiency

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10.1016/j.enconman.2021.115090

Cite this

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title = "High-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode",

abstract = "Alpha-voltaic cells have great potential in military, biomedical, and infrastructure applications due to their characteristics of long operating life, small volume, and superior adaptability. However, improvements in power conversion efficiency (PCE), and the balance between power density and stability have been a challenge owing to the {\textquoteleft}poor-matching{\textquoteright} between energy conversion transducers and alpha-emitting isotope sources, as well as the radiation damage to semiconductor devices. In this study, we report the electrical properties of a high-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode energy conversion transducer (active area of 1 cm2) that has been experimentally validated by a He ions electrostatic accelerator. Remarkably, the alpha-voltaic cell displayed an excellent PCE of 0.88\%, exhibiting a nearly 7-fold enhancement compared to alpha-voltaic cells of previous studies, with a strikingly high open-circuit voltage of 1.99 V, a short-circuit current of 13.64 nA/cm2, and a maximum output power density of 16.78 nW/cm2.",

keywords = "4H-SiC PIN junction diode, Alpha-voltaic cell, High power conversion efficiency",

author = "Runlong Gao and Linyue Liu and Yang Li and Lvkang Shen and Pengying Wan and Xiao Ouyang and Haozhe Zhang and Jinlu Ruan and Leidang Zhou and Liang Chen and Xianpeng Zhang and Jinliang Liu and Hui Li and Ming Liu and Xiaoping Ouyang",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd",

year = "2022",

month = jan,

day = "15",

doi = "10.1016/j.enconman.2021.115090",

language = "英语",

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journal = "Energy Conversion and Management",

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TY - JOUR

T1 - High-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode

AU - Gao, Runlong

AU - Liu, Linyue

AU - Li, Yang

AU - Shen, Lvkang

AU - Wan, Pengying

AU - Ouyang, Xiao

AU - Zhang, Haozhe

AU - Ruan, Jinlu

AU - Zhou, Leidang

AU - Chen, Liang

AU - Zhang, Xianpeng

AU - Liu, Jinliang

AU - Li, Hui

AU - Liu, Ming

AU - Ouyang, Xiaoping

PY - 2022/1/15

Y1 - 2022/1/15

N2 - Alpha-voltaic cells have great potential in military, biomedical, and infrastructure applications due to their characteristics of long operating life, small volume, and superior adaptability. However, improvements in power conversion efficiency (PCE), and the balance between power density and stability have been a challenge owing to the ‘poor-matching’ between energy conversion transducers and alpha-emitting isotope sources, as well as the radiation damage to semiconductor devices. In this study, we report the electrical properties of a high-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode energy conversion transducer (active area of 1 cm2) that has been experimentally validated by a He ions electrostatic accelerator. Remarkably, the alpha-voltaic cell displayed an excellent PCE of 0.88%, exhibiting a nearly 7-fold enhancement compared to alpha-voltaic cells of previous studies, with a strikingly high open-circuit voltage of 1.99 V, a short-circuit current of 13.64 nA/cm2, and a maximum output power density of 16.78 nW/cm2.

AB - Alpha-voltaic cells have great potential in military, biomedical, and infrastructure applications due to their characteristics of long operating life, small volume, and superior adaptability. However, improvements in power conversion efficiency (PCE), and the balance between power density and stability have been a challenge owing to the ‘poor-matching’ between energy conversion transducers and alpha-emitting isotope sources, as well as the radiation damage to semiconductor devices. In this study, we report the electrical properties of a high-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode energy conversion transducer (active area of 1 cm2) that has been experimentally validated by a He ions electrostatic accelerator. Remarkably, the alpha-voltaic cell displayed an excellent PCE of 0.88%, exhibiting a nearly 7-fold enhancement compared to alpha-voltaic cells of previous studies, with a strikingly high open-circuit voltage of 1.99 V, a short-circuit current of 13.64 nA/cm2, and a maximum output power density of 16.78 nW/cm2.

KW - 4H-SiC PIN junction diode

KW - Alpha-voltaic cell

KW - High power conversion efficiency

UR - https://www.scopus.com/pages/publications/85121011473

U2 - 10.1016/j.enconman.2021.115090

DO - 10.1016/j.enconman.2021.115090

M3 - 文章

AN - SCOPUS:85121011473

SN - 0196-8904

VL - 252

JO - Energy Conversion and Management

JF - Energy Conversion and Management

M1 - 115090

ER -

High-performance alpha-voltaic cell based on a 4H-SiC PIN junction diode

Abstract

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Keywords

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