TY - JOUR
T1 - High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range
AU - Sato, Hisao
AU - Wang, Hong Xing
AU - Sato, Daisuke
AU - Takaki, Ryohei
AU - Wada, Naoki
AU - Tanahashi, Tetsuya
AU - Yamashita, Kenji
AU - Kawano, Shunsuke
AU - Mizobuchi, Takashi
AU - Dempo, Akihiko
AU - Morioka, Kenji
AU - Kimura, Masahiro
AU - Nohda, Suguru
AU - Sugahara, Tomoya
AU - Sakai, Shiro
PY - 2003/11
Y1 - 2003/11
N2 - High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively.
AB - High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively.
UR - https://www.scopus.com/pages/publications/0347516430
U2 - 10.1002/pssa.200303478
DO - 10.1002/pssa.200303478
M3 - 文章
AN - SCOPUS:0347516430
SN - 0031-8965
VL - 200
SP - 102
EP - 105
JO - physica status solidi (a)
JF - physica status solidi (a)
IS - 1
ER -