High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range

High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively.