High dielectric films prepared by the nanotransfer method

Masaaki Ichiki; Ryutaro Maeda

doi:10.1109/POLYTR.2007.4339137

High dielectric films prepared by the nanotransfer method

Masaaki Ichiki
, Ryutaro Maeda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Fabrication technologies of high-density capacitor onto polymer substrate is shown using nanotransfer method. The formed PZT film capacitor has a dielectric constant of around 1000 that is over 10 times higher than that of previous one.

Original language	English
Title of host publication	6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings
Pages	55-56
Number of pages	2
DOIs	https://doi.org/10.1109/POLYTR.2007.4339137
State	Published - 2007
Externally published	Yes
Event	Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics - Tokyo, Japan Duration: 15 Jan 2007 → 18 Jan 2007

Publication series

Name	6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings

Conference

Conference	Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics
Country/Territory	Japan
City	Tokyo
Period	15/01/07 → 18/01/07

Keywords

Capacitor
Embedded substrate
High-density
Nanotransfer
PZT

Access to Document

10.1109/POLYTR.2007.4339137

Cite this

Ichiki, M., & Maeda, R. (2007). High dielectric films prepared by the nanotransfer method. In 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings (pp. 55-56). Article 4339137 (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings). https://doi.org/10.1109/POLYTR.2007.4339137

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title = "High dielectric films prepared by the nanotransfer method",

abstract = "Fabrication technologies of high-density capacitor onto polymer substrate is shown using nanotransfer method. The formed PZT film capacitor has a dielectric constant of around 1000 that is over 10 times higher than that of previous one.",

keywords = "Capacitor, Embedded substrate, High-density, Nanotransfer, PZT",

author = "Masaaki Ichiki and Ryutaro Maeda",

year = "2007",

doi = "10.1109/POLYTR.2007.4339137",

language = "英语",

isbn = "1424411866",

series = "6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings",

pages = "55--56",

booktitle = "6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings",

note = "Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics ; Conference date: 15-01-2007 Through 18-01-2007",

}

Ichiki, M & Maeda, R 2007, High dielectric films prepared by the nanotransfer method. in 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings., 4339137, 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings, pp. 55-56, Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Tokyo, Japan, 15/01/07. https://doi.org/10.1109/POLYTR.2007.4339137

High dielectric films prepared by the nanotransfer method. / Ichiki, Masaaki; Maeda, Ryutaro.
6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings. 2007. p. 55-56 4339137 (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High dielectric films prepared by the nanotransfer method

AU - Ichiki, Masaaki

AU - Maeda, Ryutaro

PY - 2007

Y1 - 2007

N2 - Fabrication technologies of high-density capacitor onto polymer substrate is shown using nanotransfer method. The formed PZT film capacitor has a dielectric constant of around 1000 that is over 10 times higher than that of previous one.

AB - Fabrication technologies of high-density capacitor onto polymer substrate is shown using nanotransfer method. The formed PZT film capacitor has a dielectric constant of around 1000 that is over 10 times higher than that of previous one.

KW - Capacitor

KW - Embedded substrate

KW - High-density

KW - Nanotransfer

KW - PZT

UR - https://www.scopus.com/pages/publications/49949119435

U2 - 10.1109/POLYTR.2007.4339137

DO - 10.1109/POLYTR.2007.4339137

M3 - 会议稿件

AN - SCOPUS:49949119435

SN - 1424411866

SN - 9781424411863

T3 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings

SP - 55

EP - 56

BT - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings

T2 - Polytronic 2007 - 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics

Y2 - 15 January 2007 through 18 January 2007

ER -

Ichiki M, Maeda R. High dielectric films prepared by the nanotransfer method. In 6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings. 2007. p. 55-56. 4339137. (6th International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2007, Proceedings). doi: 10.1109/POLYTR.2007.4339137

High dielectric films prepared by the nanotransfer method

Abstract

Publication series

Conference

Keywords

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