High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO2 MFS structures

Xin Liu; Lulu Yao; Yonghong Cheng; Bing Xiao

doi:10.7567/1347-4065/ab3494

High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO₂ MFS structures

Xin Liu
, Lulu Yao
, Yonghong Cheng
, Bing Xiao

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The effects of annealing temperature (T _a) on the crystal structure and ferroelectric properties of Al:HfO₂ films with various ALD cycle ratios were examined. A ferroelectric T _a range was obtained with respect to the cycle ratio and a linear relationship was observed between the best T _a and the particular cycle ratio. Further increasing the cycle ratio from the conventional 4.1 mol% to the current 7.9 mol% slightly decreased 2P _r from 23.6 μC cm^-2 to 20.9 μC cm^-2, implying a significant widening of the ferroelectric concentration range for the Al:HfO₂ nanofilm due to the high annealing temperature.

Original language	English
Article number	090903
Journal	Japanese Journal of Applied Physics
Volume	58
Issue number	9
DOIs	https://doi.org/10.7567/1347-4065/ab3494
State	Published - 2019

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@article{3a0fd703d5874261a860fa0e3c1bced5,

title = "High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO2 MFS structures",

abstract = "The effects of annealing temperature (T a) on the crystal structure and ferroelectric properties of Al:HfO2 films with various ALD cycle ratios were examined. A ferroelectric T a range was obtained with respect to the cycle ratio and a linear relationship was observed between the best T a and the particular cycle ratio. Further increasing the cycle ratio from the conventional 4.1 mol\% to the current 7.9 mol\% slightly decreased 2P r from 23.6 μC cm-2 to 20.9 μC cm-2, implying a significant widening of the ferroelectric concentration range for the Al:HfO2 nanofilm due to the high annealing temperature.",

author = "Xin Liu and Lulu Yao and Yonghong Cheng and Bing Xiao",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

year = "2019",

doi = "10.7567/1347-4065/ab3494",

language = "英语",

volume = "58",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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TY - JOUR

T1 - High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO2 MFS structures

AU - Liu, Xin

AU - Yao, Lulu

AU - Cheng, Yonghong

AU - Xiao, Bing

PY - 2019

Y1 - 2019

N2 - The effects of annealing temperature (T a) on the crystal structure and ferroelectric properties of Al:HfO2 films with various ALD cycle ratios were examined. A ferroelectric T a range was obtained with respect to the cycle ratio and a linear relationship was observed between the best T a and the particular cycle ratio. Further increasing the cycle ratio from the conventional 4.1 mol% to the current 7.9 mol% slightly decreased 2P r from 23.6 μC cm-2 to 20.9 μC cm-2, implying a significant widening of the ferroelectric concentration range for the Al:HfO2 nanofilm due to the high annealing temperature.

AB - The effects of annealing temperature (T a) on the crystal structure and ferroelectric properties of Al:HfO2 films with various ALD cycle ratios were examined. A ferroelectric T a range was obtained with respect to the cycle ratio and a linear relationship was observed between the best T a and the particular cycle ratio. Further increasing the cycle ratio from the conventional 4.1 mol% to the current 7.9 mol% slightly decreased 2P r from 23.6 μC cm-2 to 20.9 μC cm-2, implying a significant widening of the ferroelectric concentration range for the Al:HfO2 nanofilm due to the high annealing temperature.

UR - https://www.scopus.com/pages/publications/85072764191

U2 - 10.7567/1347-4065/ab3494

DO - 10.7567/1347-4065/ab3494

M3 - 文章

AN - SCOPUS:85072764191

SN - 0021-4922

VL - 58

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9

M1 - 090903

ER -

High annealing temperature assisted broadening of the ferroelectric concentration window in Al:HfO₂ MFS structures

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