TY - GEN
T1 - Hierarchical design of metal oxide multi-dimensional arrays from aqueous solutions
AU - Vayssieres, Lionel
PY - 2005
Y1 - 2005
N2 - The hierarchical design of well-defined and highly oriented two- and three-dimensional arrays of conventional semiconductor nanomaterials and their large scale manufacturing at low cost remain a crucial challenge to unfold the very promising future of nanodevices. In addition to economical manufacturing of nanostructured semiconductors, better fundamental knowledge of their electronic structure, physical, interfacial and structural properties and stability, is required to fully exploit their fascinating potentials. To combine such essential requirements, the predictive creation of structurally well-defined and well-ordered functional and multi-functional materials is essential. As an attempt to achieve such ambitious goals, a novel strategy to thin film metal oxide semiconductor nanotechnology processing has been developed and investigated. A thermodynamic growth control concept based on the chemical and electrostatic minimization of the surface energy as well as a thin film growth technique have been developed. Such original approach allows the generation of nanomaterials with novel and functional morphologies. Advanced metal oxide nanostructures consisting of oriented multi-dimensional arrays featuring building blocks of controlled morphologies, sizes, aspect ratios and orientations at nano-, meso-, and microscale are genuinely fabricated directly onto various substrates of large physical areas without template, surfactant, undercoating or applied field from the hydrolysis-condensation of aqueous metal salts solutions at mild temperatures (below 100°C). A survey of the innovative advances in the fabrication of highly oriented and functional nanostructure arrays of transition and post-transition metal oxides are presented as well as one-dimensional confinement effects in purpose-built bundled iron oxide quantum rods.
AB - The hierarchical design of well-defined and highly oriented two- and three-dimensional arrays of conventional semiconductor nanomaterials and their large scale manufacturing at low cost remain a crucial challenge to unfold the very promising future of nanodevices. In addition to economical manufacturing of nanostructured semiconductors, better fundamental knowledge of their electronic structure, physical, interfacial and structural properties and stability, is required to fully exploit their fascinating potentials. To combine such essential requirements, the predictive creation of structurally well-defined and well-ordered functional and multi-functional materials is essential. As an attempt to achieve such ambitious goals, a novel strategy to thin film metal oxide semiconductor nanotechnology processing has been developed and investigated. A thermodynamic growth control concept based on the chemical and electrostatic minimization of the surface energy as well as a thin film growth technique have been developed. Such original approach allows the generation of nanomaterials with novel and functional morphologies. Advanced metal oxide nanostructures consisting of oriented multi-dimensional arrays featuring building blocks of controlled morphologies, sizes, aspect ratios and orientations at nano-, meso-, and microscale are genuinely fabricated directly onto various substrates of large physical areas without template, surfactant, undercoating or applied field from the hydrolysis-condensation of aqueous metal salts solutions at mild temperatures (below 100°C). A survey of the innovative advances in the fabrication of highly oriented and functional nanostructure arrays of transition and post-transition metal oxides are presented as well as one-dimensional confinement effects in purpose-built bundled iron oxide quantum rods.
UR - https://www.scopus.com/pages/publications/34249932797
M3 - 会议稿件
AN - SCOPUS:34249932797
SN - 1558998551
SN - 9781558998551
T3 - Materials Research Society Symposium Proceedings
SP - 471
EP - 476
BT - Assembly at the Nanoscale
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -