Heteroepitaxy growth of single crystal diamond on Ir/Pd/Al₂O₃ (11–20) substrate

Pd features good ductility flexibility and plasticity, and it also has a face-centered cubic lattice structure similar to Ir and nearly the same lattice constant. Pd (0 0 1) is prepared by magnetron sputtering on Al₂O₃ (11–20) substrate, and then the Ir (0 0 1) grows by epitaxy. Pd acts as the support layer and buffer layer of Ir on Al₂O₃ to bring down the stress between Ir and substrate. We prepare heteroepitaxial single crystal diamond by BEN on Ir/Pd/Al₂O₃ (11–20) substrate. 20 × 20 × 0.6 mm³ heteroepitaxial SCD is finally prepared. It shows good crystal quality, with its 004 direction swing curve FWHM = 194 arcsec and 311 direction FWHM = 396 arcsec.