Heteroepitaxial growth of high al fraction AlGaN/GaN and preparation of schottky barrier diodes

A high Al fraction AlGaN/GaN heterostructure epitaxial material with AlN interlayer was prepared by MOCVD, magnetron sputtering was used to sputter Ti/Al/Ti/Au ohmic contact electrode on the basis of the epitaxial material, EB evaporation was used to evaporate Ni/Au schottky contact electrode to preparate AlGaN/GaN SBD, the relevant performance of the epitaxial material and devices was tested, the test results show that the open voltage of the device is about 1.1 V, the reverse leakage current is less than 0.5 μA and the backward breakdown voltage is about 68.3 V, the device has very obvious rectifier features, the forward and reverse characteristics of the device with AlN interlayer are better than the device without AlN. So, AlN interlayer can effectively improve the performance of the device.