GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Wang Xiaoliang; Sun Dianzhao; Kong Meiying; Hou Xun; Zeng Yiping

doi:10.1016/0022-0248(95)01028-9

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Wang Xiaoliang
, Sun Dianzhao
, Kong Meiying
, Hou Xun
, Zeng Yiping

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Journal of Crystal Growth
Volume	164
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(95)01028-9
State	Published - Jul 1996

Access to Document

10.1016/0022-0248(95)01028-9

Cite this

@article{ff187a2fa8964e5e863f5803362f362f,

title = "GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells",

abstract = "Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 {\AA}, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 {\AA}, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.",

author = "Wang Xiaoliang and Sun Dianzhao and Kong Meiying and Hou Xun and Zeng Yiping",

year = "1996",

month = jul,

doi = "10.1016/0022-0248(95)01028-9",

language = "英语",

volume = "164",

pages = "281--284",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

AU - Xiaoliang, Wang

AU - Dianzhao, Sun

AU - Meiying, Kong

AU - Xun, Hou

AU - Yiping, Zeng

PY - 1996/7

Y1 - 1996/7

N2 - Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

AB - Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than ∼ 60 Å, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Å, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

UR - https://www.scopus.com/pages/publications/0030190557

U2 - 10.1016/0022-0248(95)01028-9

DO - 10.1016/0022-0248(95)01028-9

M3 - 文章

AN - SCOPUS:0030190557

SN - 0022-0248

VL - 164

SP - 281

EP - 284

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this