Growth of the relaxor based ferroelectric single crystals Pb(In 1/2Nb1/2)O3-Pb(Mg1/3Nb 2/3)O3-PbTiO3 by vertical Bridgman technique

Xian Wang; Zhuo Xu; Zhenrong Li; Fei Li; Hongbing Chen; Shiji Fan

doi:10.1080/00150191003676405

Growth of the relaxor based ferroelectric single crystals Pb(In _1/2Nb_1/2)O₃-Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ by vertical Bridgman technique

Xian Wang
, Zhuo Xu
, Zhenrong Li
, Fei Li
, Hongbing Chen
, Shiji Fan

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

The relaxor-based ferroelectric single crystals Pb(In_1/2Nb _1/2)O₃- Pb(Mg_1/3 Nb_2/3)O ₃-PbTiO₃ were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of Φ25-40 mm and length of 80-170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (ε∼5500, tanδ∼1.35%, d ₃₃ ∼1900pC/N, k₃₃∼0.9). Both the higher rhombohedral-tetragonal phase transition temperature (T_r/t ∼100-120°C) and Curie temperature (T_c ∼170-200°C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.

Original language	English
Pages (from-to)	173-180
Number of pages	8
Journal	Ferroelectrics
Volume	401
Issue number	1
DOIs	https://doi.org/10.1080/00150191003676405
State	Published - 2010
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: 23 Aug 2009 → 27 Aug 2009

Keywords

Bridgman technique
Crystal growth
Electrical characterization
Single crystal
Ultrasonic application

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@article{780593cd7c704a73a319c634c8e299fb,

title = "Growth of the relaxor based ferroelectric single crystals Pb(In 1/2Nb1/2)O3-Pb(Mg1/3Nb 2/3)O3-PbTiO3 by vertical Bridgman technique",

abstract = "The relaxor-based ferroelectric single crystals Pb(In1/2Nb 1/2)O3- Pb(Mg1/3 Nb2/3)O 3-PbTiO3 were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of Φ25-40 mm and length of 80-170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (ε∼5500, tanδ∼1.35\%, d 33 ∼1900pC/N, k33∼0.9). Both the higher rhombohedral-tetragonal phase transition temperature (Tr/t ∼100-120°C) and Curie temperature (Tc ∼170-200°C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.",

keywords = "Bridgman technique, Crystal growth, Electrical characterization, Single crystal, Ultrasonic application",

author = "Xian Wang and Zhuo Xu and Zhenrong Li and Fei Li and Hongbing Chen and Shiji Fan",

year = "2010",

doi = "10.1080/00150191003676405",

language = "英语",

volume = "401",

pages = "173--180",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

}

TY - JOUR

T1 - Growth of the relaxor based ferroelectric single crystals Pb(In 1/2Nb1/2)O3-Pb(Mg1/3Nb 2/3)O3-PbTiO3 by vertical Bridgman technique

AU - Wang, Xian

AU - Xu, Zhuo

AU - Li, Zhenrong

AU - Li, Fei

AU - Chen, Hongbing

AU - Fan, Shiji

PY - 2010

Y1 - 2010

N2 - The relaxor-based ferroelectric single crystals Pb(In1/2Nb 1/2)O3- Pb(Mg1/3 Nb2/3)O 3-PbTiO3 were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of Φ25-40 mm and length of 80-170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (ε∼5500, tanδ∼1.35%, d 33 ∼1900pC/N, k33∼0.9). Both the higher rhombohedral-tetragonal phase transition temperature (Tr/t ∼100-120°C) and Curie temperature (Tc ∼170-200°C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.

AB - The relaxor-based ferroelectric single crystals Pb(In1/2Nb 1/2)O3- Pb(Mg1/3 Nb2/3)O 3-PbTiO3 were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of Φ25-40 mm and length of 80-170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (ε∼5500, tanδ∼1.35%, d 33 ∼1900pC/N, k33∼0.9). Both the higher rhombohedral-tetragonal phase transition temperature (Tr/t ∼100-120°C) and Curie temperature (Tc ∼170-200°C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.

KW - Bridgman technique

KW - Crystal growth

KW - Electrical characterization

KW - Single crystal

KW - Ultrasonic application

UR - https://www.scopus.com/pages/publications/79952368434

U2 - 10.1080/00150191003676405

DO - 10.1080/00150191003676405

M3 - 会议文章

AN - SCOPUS:79952368434

SN - 0015-0193

VL - 401

SP - 173

EP - 180

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

Growth of the relaxor based ferroelectric single crystals Pb(In _1/2Nb_1/2)O₃-Pb(Mg_1/3Nb _2/3)O₃-PbTiO₃ by vertical Bridgman technique

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