Growth and characterization of spindle-like Ga                         2                         O                         3                          nanocrystals by electrochemical reaction in hydrofluoric solution

Lungang Feng; Yufeng Li; Xilin Su; Shuai Wang; Hao Liu; Jiangteng Wang; Zhina Gong; Wen Ding; Ye Zhang; Feng Yun

doi:10.1016/j.apsusc.2016.07.052

Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution

Lungang Feng
, Yufeng Li
, Xilin Su
, Shuai Wang
, Hao Liu
, Jiangteng Wang
, Zhina Gong
, Wen Ding
, Ye Zhang
, Feng Yun

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report a novel fabrication method of spindle-like gallium oxide (Ga ₂ O ₃ ) nanocrystals via two steps processed by electrochemical reaction of the MOVPE-grown GaN epitaxial layer in HF/ethanol (1:6) electrolyte and subsequent heat treatment. Depending on the electrolyte concentration, reaction time and applied voltage, micrometer- to nanometer-size spindle-like gallium fluoride tri-hydrate (GaF ₃ ·3H ₂ O) of different densities and geometrical dimensions were formed on the surface of GaN. EDS, XPS and XRD were used to characterize the properties of the material before and after heat treatment. It is found that due to heat treatment at above 600 °C, nanocrystalline Ga ₂ O ₃ were transformed from the GaF ₃ ·3H ₂ O via pyrohydrolysis reaction mechanism. The band gap of ∼5.1 eV of the spindle-like Ga ₂ O ₃ was measured by the optical absorption spectroscopy.

Original language	English
Pages (from-to)	205-210
Number of pages	6
Journal	Applied Surface Science
Volume	389
DOIs	https://doi.org/10.1016/j.apsusc.2016.07.052
State	Published - 15 Dec 2016

Keywords

Electrochemical etch
GaN
Solar-blind detecting
Spindle Ga O
Spindle GaF ·3H O

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10.1016/j.apsusc.2016.07.052

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Feng, L., Li, Y., Su, X., Wang, S., Liu, H., Wang, J., Gong, Z., Ding, W., Zhang, Y., & Yun, F. (2016). Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution Applied Surface Science, 389, 205-210. https://doi.org/10.1016/j.apsusc.2016.07.052

@article{e8572b05963846d0a34dc59321e11515,

title = " Growth and characterization of spindle-like Ga 2 O 3 nanocrystals by electrochemical reaction in hydrofluoric solution ",

abstract = " We report a novel fabrication method of spindle-like gallium oxide (Ga 2 O 3 ) nanocrystals via two steps processed by electrochemical reaction of the MOVPE-grown GaN epitaxial layer in HF/ethanol (1:6) electrolyte and subsequent heat treatment. Depending on the electrolyte concentration, reaction time and applied voltage, micrometer- to nanometer-size spindle-like gallium fluoride tri-hydrate (GaF 3 ·3H 2 O) of different densities and geometrical dimensions were formed on the surface of GaN. EDS, XPS and XRD were used to characterize the properties of the material before and after heat treatment. It is found that due to heat treatment at above 600 °C, nanocrystalline Ga 2 O 3 were transformed from the GaF 3 ·3H 2 O via pyrohydrolysis reaction mechanism. The band gap of ∼5.1 eV of the spindle-like Ga 2 O 3 was measured by the optical absorption spectroscopy.",

keywords = "Electrochemical etch, GaN, Solar-blind detecting, Spindle Ga O, Spindle GaF ·3H O",

author = "Lungang Feng and Yufeng Li and Xilin Su and Shuai Wang and Hao Liu and Jiangteng Wang and Zhina Gong and Wen Ding and Ye Zhang and Feng Yun",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2016",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2016.07.052",

language = "英语",

volume = "389",

pages = "205--210",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

Feng, L, Li, Y, Su, X, Wang, S, Liu, H, Wang, J, Gong, Z, Ding, W, Zhang, Y & Yun, F 2016, ' Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution ', Applied Surface Science, vol. 389, pp. 205-210. https://doi.org/10.1016/j.apsusc.2016.07.052

Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution . / Feng, Lungang; Li, Yufeng; Su, Xilin et al.
In: Applied Surface Science, Vol. 389, 15.12.2016, p. 205-210.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Growth and characterization of spindle-like Ga 2 O 3 nanocrystals by electrochemical reaction in hydrofluoric solution

AU - Feng, Lungang

AU - Li, Yufeng

AU - Su, Xilin

AU - Wang, Shuai

AU - Liu, Hao

AU - Wang, Jiangteng

AU - Gong, Zhina

AU - Ding, Wen

AU - Zhang, Ye

AU - Yun, Feng

PY - 2016/12/15

Y1 - 2016/12/15

N2 - We report a novel fabrication method of spindle-like gallium oxide (Ga 2 O 3 ) nanocrystals via two steps processed by electrochemical reaction of the MOVPE-grown GaN epitaxial layer in HF/ethanol (1:6) electrolyte and subsequent heat treatment. Depending on the electrolyte concentration, reaction time and applied voltage, micrometer- to nanometer-size spindle-like gallium fluoride tri-hydrate (GaF 3 ·3H 2 O) of different densities and geometrical dimensions were formed on the surface of GaN. EDS, XPS and XRD were used to characterize the properties of the material before and after heat treatment. It is found that due to heat treatment at above 600 °C, nanocrystalline Ga 2 O 3 were transformed from the GaF 3 ·3H 2 O via pyrohydrolysis reaction mechanism. The band gap of ∼5.1 eV of the spindle-like Ga 2 O 3 was measured by the optical absorption spectroscopy.

AB - We report a novel fabrication method of spindle-like gallium oxide (Ga 2 O 3 ) nanocrystals via two steps processed by electrochemical reaction of the MOVPE-grown GaN epitaxial layer in HF/ethanol (1:6) electrolyte and subsequent heat treatment. Depending on the electrolyte concentration, reaction time and applied voltage, micrometer- to nanometer-size spindle-like gallium fluoride tri-hydrate (GaF 3 ·3H 2 O) of different densities and geometrical dimensions were formed on the surface of GaN. EDS, XPS and XRD were used to characterize the properties of the material before and after heat treatment. It is found that due to heat treatment at above 600 °C, nanocrystalline Ga 2 O 3 were transformed from the GaF 3 ·3H 2 O via pyrohydrolysis reaction mechanism. The band gap of ∼5.1 eV of the spindle-like Ga 2 O 3 was measured by the optical absorption spectroscopy.

KW - Electrochemical etch

KW - GaN

KW - Solar-blind detecting

KW - Spindle Ga O

KW - Spindle GaF ·3H O

UR - https://www.scopus.com/pages/publications/84979258474

U2 - 10.1016/j.apsusc.2016.07.052

DO - 10.1016/j.apsusc.2016.07.052

M3 - 文章

AN - SCOPUS:84979258474

SN - 0169-4332

VL - 389

SP - 205

EP - 210

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Feng L, Li Y, Su X, Wang S, Liu H, Wang J et al. Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution Applied Surface Science. 2016 Dec 15;389:205-210. doi: 10.1016/j.apsusc.2016.07.052

Growth and characterization of spindle-like Ga ₂ O ₃ nanocrystals by electrochemical reaction in hydrofluoric solution

Abstract

Keywords

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