Abstract
We have prepared three kinds of graphene heat dissipation film as non-continuous single layer single-crystal graphene (NCSG), continuous single layer graphene (CSG) and continuous double layer graphene (CDG). Then graphene was transferred on 2-inches SiO2/Si substrate as heat dissipation film. Temperature field distribution was tested by infrared camera, and thermal conductivity of composite interface of heat dissipation film on SiO2/Si was studied using Fourier’s law. When supply voltage was 10 V, NCSG film made the center temperature dropped by 1 °C, and CSG made the central temperature dropped by 6 °C and the thermal conductivity of CSG on SiO2/Si was increased by 15.7 %. For CSG on SiO2/Si, with the increased of supply voltage, the center temperature drop was increased, but the improvement of thermal conductivity was decreased.
| Original language | English |
|---|---|
| Pages (from-to) | 7715-7721 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 27 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1 Jul 2016 |
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