GIAXD and XPS characterization of SP3C doped SiC superhard nanocomposite film

  • Jian Yi
  • , Xiaodong He
  • , Yue Sun
  • , Zhipeng Xie
  • , Weijiang Xue
  • , Fenyan Cao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The SP3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The SP3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the SP3C doped SiC nanocomposite films were not a perfect crystal, which was composed with fine SiC nanocrystals, and a second phase very similar to diamond like carbon (DLC). XPS analysis showed that the excess C existed in the present films changed from diamond into DLC structure from the surface to inner of the films.

Original languageEnglish
Title of host publicationHigh-Performance Ceramics VII
PublisherTrans Tech Publications Ltd
Pages971-974
Number of pages4
ISBN (Print)9783037854259
DOIs
StatePublished - 2012
Externally publishedYes
Event7th China International Conference on High-Performance Ceramics, CICC-7 - Xiamen, China
Duration: 4 Nov 20117 Nov 2011

Publication series

NameKey Engineering Materials
Volume512-515
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

Conference7th China International Conference on High-Performance Ceramics, CICC-7
Country/TerritoryChina
CityXiamen
Period4/11/117/11/11

Keywords

  • GIAXD
  • Microstructure
  • SiC
  • XPS

Fingerprint

Dive into the research topics of 'GIAXD and XPS characterization of SP3C doped SiC superhard nanocomposite film'. Together they form a unique fingerprint.

Cite this