Abstract
The ongoing miniaturization of electronic devices has driven an urgent demand for advanced solid-state refrigeration technologies. The negative electrocaloric effect (NECE) exhibited by antiferroelectric (AFE) materials presents a promising cooling solution, yet its performance requires further optimization. In this work, a series of PbZrO3-based thin films with varying Ce concentrations (0–8 mol%, abbreviated as PCZ-100x) were fabricated on Pt(111)/Ti/SiO2/Si substrates using a sol-gel method to enhance NECE. Comprehensive structural, dielectric, and polarization characterizations demonstrated that moderate Ce doping effectively stabilizes the AFE phase and increase polarization response. As a result, PCZ-6 film exhibits exceptional NECE at room-temperature including a giant isothermal entropy change (ΔS = 25.46 J K−1 kg−1) and a remarkable adiabatic temperature variation (ΔT = −23.54 K) at 350 kV/cm. This work offers a promising pathway for the development of efficient cooling materials.
| Original language | English |
|---|---|
| Pages (from-to) | 33646-33652 |
| Number of pages | 7 |
| Journal | Ceramics International |
| Volume | 51 |
| Issue number | 21 |
| DOIs | |
| State | Published - Sep 2025 |
Keywords
- Antiferroelectric films
- Negative electrocaloric effect
- PbZrO
- Phase transition
- Sol-gel