Abstract
In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ∼50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.
| Original language | English |
|---|---|
| Article number | 8936961 |
| Pages (from-to) | 228-231 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 41 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 2020 |
| Externally published | Yes |
Keywords
- GeSe
- OTS
- Selector
- random number generation
- resistive-switching memory (RRAM)
- variability
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