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GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

  • Zheng Chai
  • , Pedro Freitas
  • , John Marsland
  • , Andrea Fantini
  • , Daniele Garbin
  • , Ludovic Goux
  • , Gouri Sankar Kar
  • , Wei Shao
  • , Weidong Zhang
  • , James Brown
  • , Robin Degraeve
  • , Flora D. Salim
  • , Sergiu Clima
  • , Firas Hatem
  • , Jian Fu Zhang
  • Liverpool John Moores University
  • Interuniversitair Micro-Elektronica Centrum
  • Royal Melbourne Institute of Technology University

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

In this paper, we propose and demonstrate a novel technique for true random number generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector devices. The inherent variability in OTS threshold voltage results in a bimodal distribution of on/off states which can be easily converted into digital bits. The experimental evaluation shows that the proposed TRNG enables the generation of high-quality random bits that passed 12 tests in the National Institute of Standards and Technology statistical test suite without complex external circuits for post-processing. The randomness is further evidenced by the prediction rate of ∼50% using machine learning algorithm. Compared with the TRNGs based on non-volatile memories, the volatile nature of OTS avoids the reset operation, thus further simplifying the operation and improving the generation frequency.

Original languageEnglish
Article number8936961
Pages (from-to)228-231
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number2
DOIs
StatePublished - Feb 2020
Externally publishedYes

Keywords

  • GeSe
  • OTS
  • Selector
  • random number generation
  • resistive-switching memory (RRAM)
  • variability

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