TY - GEN
T1 - Geometrical Design of Ceramic Substrate for High Voltage Power Modules
AU - Yan, Feifei
AU - Wang, Laili
AU - Zhang, Boya
AU - Yu, Longyang
AU - Wang, Kangping
AU - Yang, Tao
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/6
Y1 - 2020/9/6
N2 - High blocking voltage of wide bandgap (WBG) devices will improve the power density and power capacity in power electronic systems. However, such high voltage level of WBG devices can result in partial discharges (PDs) in power modules and threat the reliability of modules. Sources of PDs lie in the triple points between ceramic, silicone gel and metallization in power modules. The triple points combine electric field enhancement and insulation material defects (interface of ceramic and silicone gel). This paper focuses on the triple points and designs a new geometry of ceramic substrate. The new geometry is studied by finite element simulation in COMSOL Multiphysics. In the new designed ceramic substrate, the triple point is moved from the edge of metallization to a location where the electric field stress is lower. Moreover, in the new geometry, increasing the height ratio of silicone gel under the protruding metallization can relieve the high electric field stress at the edge of metallization.
AB - High blocking voltage of wide bandgap (WBG) devices will improve the power density and power capacity in power electronic systems. However, such high voltage level of WBG devices can result in partial discharges (PDs) in power modules and threat the reliability of modules. Sources of PDs lie in the triple points between ceramic, silicone gel and metallization in power modules. The triple points combine electric field enhancement and insulation material defects (interface of ceramic and silicone gel). This paper focuses on the triple points and designs a new geometry of ceramic substrate. The new geometry is studied by finite element simulation in COMSOL Multiphysics. In the new designed ceramic substrate, the triple point is moved from the edge of metallization to a location where the electric field stress is lower. Moreover, in the new geometry, increasing the height ratio of silicone gel under the protruding metallization can relieve the high electric field stress at the edge of metallization.
KW - ceramic substrate
KW - electric field enhancement
KW - geometry design
KW - high voltage packaging
KW - power modules
UR - https://www.scopus.com/pages/publications/85099402719
U2 - 10.1109/ICHVE49031.2020.9279992
DO - 10.1109/ICHVE49031.2020.9279992
M3 - 会议稿件
AN - SCOPUS:85099402719
T3 - 7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020 - Proceedings
BT - 7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020
Y2 - 6 September 2020 through 10 September 2020
ER -