GaN-Based Full-Bridge CRM PFC with Unipolar Double-Frequency Control Scheme

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Abstract

In AC/DC front end applications, bridgeless power factor correction (PFC) rectifier is popular for its small number of components and low conduction losses, with the use of Gallium Nitride (GaN) devices to eliminate reverse recovery and boost switching frequency. In order to further reduce the inductor volume and improve power density, this paper proposes a novel control scheme which combines unipolar double-frequency PWM scheme with critical mode (CRM) operation for GaN-based full-bridge single-phase PFC. With the proposed control scheme, the equivalent switching frequency is doubled with both legs of the full-bridge PFC switching at high frequency, while CRM operation is maintained to achieve zero voltage switching (ZVS). Implementation of the digital-based control is also detailed. Finally, the effectiveness of the proposed control scheme is validated by a GaN-based full-bridge PFC prototype.

Original languageEnglish
Title of host publication2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1567-1572
Number of pages6
ISBN (Electronic)9781728153018
DOIs
StatePublished - 29 Nov 2020
Event9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia - Nanjing, China
Duration: 29 Nov 20202 Dec 2020

Publication series

Name2020 IEEE 9th International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia

Conference

Conference9th IEEE International Power Electronics and Motion Control Conference, IPEMC 2020 ECCE Asia
Country/TerritoryChina
CityNanjing
Period29/11/202/12/20

Keywords

  • Gallium Nitride (GaN) device
  • bridgeless PFC
  • critical mode (CRM)
  • single-phase power factor correction (PFC) rectifier
  • unipolar pulse-width-modulation (PWM) scheme
  • zero voltage switching (ZVS)

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