g-r noise modeling and deep-level analysis for bipolar transistors

The physical mechanism of g-r noise induced by deep-level defects in the emitter space-charge region for bipolar transistors is analyzed quantitatively and a new model on g-r noise in bipolar transistors is developed. The experimental dependence of g-r noise on the bias voltage is explained from the model. Based on the model, the deep-level parameters in bipolar devices are determined by means of g-r noise measurement.